Single FETs, MOSFETs

Results: 14
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedGoford SemiconductorGood-Ark SemiconductorMicro Commercial CoNexperia USA Inc.onsemiPanjit International Inc.STMicroelectronicsVishay Siliconix
Series
-AlphaSGT™QFET®STripFET™ IITrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
150mA (Ta)1A (Tc)2A (Ta)2.2A (Ta)2.3A (Ta)2.4A (Ta)2.4A (Tc)3A (Ta)4A (Tc)5A (Ta)6A (Tj)8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
68mOhm @ 5A, 10V140mOhm @ 2A, 10V170mOhm @ 2A, 10V195mOhm @ 3.6A, 10V200mOhm @ 2A, 10V200mOhm @ 6A, 10V205mOhm @ 6A, 10V220mOhm @ 1.6A, 10V235mOhm @ 2.1A, 10V260mOhm @ 1.2A, 10V310mOhm @ 2.2A, 10V350mOhm @ 1.4A, 10V1.05Ohm @ 500mA, 10V6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA2.5V @ 250µA2.7V @ 250µA2.8V @ 1mA2.8V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.8 nC @ 10 V8.2 nC @ 10 V8.3 nC @ 10 V9.1 nC @ 10 V10.7 nC @ 10 V14 nC @ 10 V16.5 nC @ 10 V17 nC @ 10 V25 nC @ 10 V30 nC @ 10 V34.8 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 25 V250 pF @ 25 V250 pF @ 50 V280 pF @ 25 V401 pF @ 25 V424 pF @ 50 V430 pF @ 30 V508 pF @ 30 V717 pF @ 50 V760 pF @ 25 V879 pF @ 30 V1055 pF @ 50 V1647 pF @ 50 V2000 pF @ 50 V
Power Dissipation (Max)
250mW (Ta)1.2W (Tc)1.25W1.4W (Ta)1.78W (Ta)1.8W (Ta)2W (Ta)2W (Tc)2.15W (Ta)2.5W (Ta), 32.1W (Tc)3.1W (Ta)3.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-223SOT-223-3SOT-223-4SOT-23-3TO-236ABTO-252-3TO-252AA
Package / Case
3-SMD, SOT-23-3 VariantTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS123,215
MOSFET N-CH 100V 150MA TO236AB
Nexperia USA Inc.
271,018
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37730
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
150mA (Ta)
10V
6Ohm @ 120mA, 10V
2.8V @ 1mA
-
±20V
40 pF @ 25 V
-
250mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
436,063
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.75941
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
2A (Ta)
4.5V, 10V
140mOhm @ 2A, 10V
2.7V @ 250µA
3.8 nC @ 10 V
±20V
250 pF @ 50 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
TO-252
SUD09P10-195-GE3
MOSFET P-CH 100V 8.8A TO252
Vishay Siliconix
24,638
In Stock
1 : ¥6.81000
Cut Tape (CT)
2,000 : ¥2.82959
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
8.8A (Tc)
4.5V, 10V
195mOhm @ 3.6A, 10V
2.5V @ 250µA
34.8 nC @ 10 V
±20V
1055 pF @ 50 V
-
2.5W (Ta), 32.1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT223-3L
STN2NF10
MOSFET N-CH 100V 2.4A SOT-223
STMicroelectronics
6,666
In Stock
1 : ¥8.37000
Cut Tape (CT)
4,000 : ¥3.46684
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
2.4A (Tc)
10V
260mOhm @ 1.2A, 10V
4V @ 250µA
14 nC @ 10 V
±20V
280 pF @ 25 V
-
3.3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
SOT-223-3
DMN10H220LE-13
MOSFET N-CH 100V 2.3A SOT223
Diodes Incorporated
6,511
In Stock
97,500
Factory
1 : ¥4.76000
Cut Tape (CT)
2,500 : ¥1.80573
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
2.3A (Ta)
4.5V, 10V
220mOhm @ 1.6A, 10V
2.5V @ 250µA
8.3 nC @ 10 V
±20V
401 pF @ 25 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
MCT03N06-TP
MCT06P10-TP
MOSFET P-CH 100V 6A SOT223
Micro Commercial Co
27,726
In Stock
1 : ¥6.32000
Cut Tape (CT)
2,500 : ¥2.39982
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
6A (Tj)
4.5V, 10V
205mOhm @ 6A, 10V
2.8V @ 250µA
25 nC @ 10 V
±20V
760 pF @ 25 V
-
1.25W
150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
TO-252-2
ZXMP10A16KTC
MOSFET P-CH 100V 3A TO252-3
Diodes Incorporated
5,113
In Stock
175,000
Factory
1 : ¥7.55000
Cut Tape (CT)
2,500 : ¥3.13982
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
3A (Ta)
6V, 10V
235mOhm @ 2.1A, 10V
4V @ 250µA
16.5 nC @ 10 V
±20V
717 pF @ 50 V
-
2.15W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-223-3
ZXMP10A17GQTA
MOSFET P-CH 100V 2.4A SOT223
Diodes Incorporated
2,360
In Stock
11,000
Factory
1 : ¥8.37000
Cut Tape (CT)
1,000 : ¥3.67487
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
2.4A (Ta)
6V, 10V
350mOhm @ 1.4A, 10V
4V @ 250µA
10.7 nC @ 10 V
±20V
424 pF @ 50 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
TO-261-4, TO-261AA
PJW3N10A_R2_00001
100V N-CHANNEL ENHANCEMENT MODE
Panjit International Inc.
8,851
In Stock
1 : ¥3.37000
Cut Tape (CT)
2,500 : ¥1.14478
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
2.2A (Ta)
4.5V, 10V
310mOhm @ 2.2A, 10V
2.5V @ 250µA
9.1 nC @ 10 V
±20V
508 pF @ 30 V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
GSBCP53-10
GSFL1003
MOSFET, P-CH, SINGLE, -2A, -100V
Good-Ark Semiconductor
5,883
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.41378
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
2A (Ta)
4.5V, 10V
200mOhm @ 2A, 10V
2.2V @ 250µA
30 nC @ 10 V
±20V
2000 pF @ 50 V
-
1.78W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
TO-261-4, TO-261AA
PJW5P06A_R2_00001
60V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
5,235
In Stock
1 : ¥4.27000
Cut Tape (CT)
2,500 : ¥1.42608
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
5A (Ta)
4.5V, 10V
68mOhm @ 5A, 10V
2.5V @ 250µA
17 nC @ 10 V
±20V
879 pF @ 30 V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
G2K3N10H
G04P10HE
P-100V,-4A,RD(MAX)<200M@-10V,VTH
Goford Semiconductor
7,359
In Stock
1 : ¥4.35000
Cut Tape (CT)
2,500 : ¥1.46765
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
4A (Tc)
4.5V, 10V
200mOhm @ 6A, 10V
2.8V @ 250µA
25 nC @ 10 V
±20V
1647 pF @ 50 V
-
1.2W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
TO-261-4, TO-261AA
PJW3P06A-AU_R2_000A1
60V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
6,996
In Stock
1 : ¥5.01000
Cut Tape (CT)
2,500 : ¥1.69907
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3A (Ta)
4.5V, 10V
170mOhm @ 2A, 10V
2.5V @ 250µA
8.3 nC @ 10 V
±20V
430 pF @ 30 V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-223
TO-261-4, TO-261AA
SOT223-3L
FQT5P10TF
MOSFET P-CH 100V 1A SOT223-4
onsemi
0
In Stock
Check Lead Time
1 : ¥6.16000
Cut Tape (CT)
4,000 : ¥2.33719
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1A (Tc)
10V
1.05Ohm @ 500mA, 10V
4V @ 250µA
8.2 nC @ 10 V
±30V
250 pF @ 25 V
-
2W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
Showing
of 14

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.