Single FETs, MOSFETs

Results: 27
Manufacturer
EPCGeneSiC SemiconductorInfineon TechnologiesMicrochip TechnologyonsemiWolfspeed, Inc.
Series
-C3M™CoolSiC™EE SeriesE-SerieseGaN®G3R™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)TrayTube
Product Status
ActiveNot For New Designs
Technology
GaNFET (Gallium Nitride)SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
80 V650 V1200 V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)17A (Tc)17.9A (Tc)18A (Tc)21A (Tc)22A (Tc)29A (Tc)30A30A (Tc)32A (Tc)34A (Tc)37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V15V18V20V-
Rds On (Max) @ Id, Vgs
2.2mOhm @ 29A, 5V17mOhm @ 84.29A, 15V28mOhm @ 60A, 20V28.8mOhm @ 62.1A, 15V30mOhm @ 40A, 18V43mOhm @ 38.9A, 15V43mOhm @ 41.4A, 15V53.5mOhm @ 33.3A, 15V59mOhm @ 20A, 15V79mOhm @ 13.2A, 15V90mOhm @ 20A, 15V97.5mOhm @ 17.9A, 15V100mOhm @ 15A, 20V110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
2.5V @ 13mA2.69V @ 7.5mA2.8V @ 1mA3.6V @ 1.86mA3.6V @ 10.7mA3.6V @ 11.5mA3.6V @ 17.1mA3.6V @ 1mA3.6V @ 2.33mA3.6V @ 3.6mA3.6V @ 5mA3.6V @ 9.2mA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 5 V19 nC @ 15 V26 nC @ 15 V28 nC @ 15 V33 nC @ 15 V38 nC @ 15 V46 nC @ 15 V49 nC @ 15 V51 nC @ 15 V52 nC @ 15 V53 nC @ 15 V54 nC @ 15 V
Vgs (Max)
-8V, +19V+6V, -4V+15V, -4V+19V, -8V+20V, -10V+22V, -10V+23V, -10V+25V, -15V-
Input Capacitance (Ciss) (Max) @ Vds
345 pF @ 1000 V632 pF @ 1000 V640 pF @ 400 V730 pF @ 1000 V838 pF @ 1000 V1020 pF @ 600 V1170 pF @ 600 V1350 pF @ 1000 V1390 pF @ 1000 V1480 pF @ 1000 V1560 pF @ 800 V1670 pF @ 800 V
FET Feature
-Current Sensing
Power Dissipation (Max)
50W (Tc)86W (Tc)97W (Tc)98W (Tc)103W (Tc)104W (Tc)113.6W (Tc)131W (Tc)136W (Tc)145W (Tc)150W (Tc)170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
DiePG-TO247-4-1PG-TO263-7-12TO-247-3TO-247-4TO-247-4LTO-263-7
Package / Case
DieTO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2206
EPC2206
GANFET N-CH 80V 90A DIE
EPC
19,950
In Stock
1 : ¥53.20000
Cut Tape (CT)
500 : ¥32.10510
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
80 V
90A (Ta)
5V
2.2mOhm @ 29A, 5V
2.5V @ 13mA
19 nC @ 5 V
+6V, -4V
1940 pF @ 40 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
C2D10120D
C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3
Wolfspeed, Inc.
2,753
In Stock
1 : ¥60.75000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.6A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
19 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
537
In Stock
1 : ¥88.42000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
C2D10120D
C3M0075120D
SICFET N-CH 1200V 30A TO247-3
Wolfspeed, Inc.
835
In Stock
1 : ¥161.56000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
54 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065100K
C3M0075120K
SICFET N-CH 1200V 30A TO247-4L
Wolfspeed, Inc.
1,274
In Stock
1 : ¥164.27000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
51 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0040120K
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
1,980
In Stock
1 : ¥221.82000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
15V
53.5mOhm @ 33.3A, 15V
3.6V @ 9.2mA
99 nC @ 15 V
+15V, -4V
2900 pF @ 1000 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065090J
C3M0032120J1
1200V 32MOHM SIC MOSFET
Wolfspeed, Inc.
1,330
In Stock
1 : ¥297.18000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
15V
43mOhm @ 41.4A, 15V
3.6V @ 11.5mA
111 nC @ 15 V
+15V, -4V
3424 pF @ 1000 V
-
277W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4
NVH4L020N120SC1
SICFET N-CH 1200V 102A TO247
onsemi
1,363
In Stock
1 : ¥420.16000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
102A (Tc)
20V
28mOhm @ 60A, 20V
4.3V @ 20mA
220 nC @ 20 V
+25V, -15V
2943 pF @ 800 V
-
510W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
E4M0013120K
E4M0013120K
13M, 1200V, SIC FET TO-247, AUTO
Wolfspeed, Inc.
289
In Stock
1 : ¥809.46000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
153A (Tc)
15V
17mOhm @ 84.29A, 15V
3.8V @ 23.18mA
293 nC @ 15 V
+19V, -8V
7407 pF @ 1000 V
-
517W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0120065K
650V 120M SIC MOSFET
Wolfspeed, Inc.
577
In Stock
1 : ¥90.72000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0120065D
650V 120M SIC MOSFET
Wolfspeed, Inc.
425
In Stock
1 : ¥90.72000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0160120D
SICFET N-CH 1200V 17A TO247-3
Wolfspeed, Inc.
1,944
In Stock
1 : ¥91.21000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
15V
208mOhm @ 8.5A, 15V
3.6V @ 2.33mA
38 nC @ 15 V
+15V, -4V
632 pF @ 1000 V
-
97W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0060065D
SICFET N-CH 650V 37A TO247-3
Wolfspeed, Inc.
697
In Stock
1 : ¥95.56000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
37A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 5mA
46 nC @ 15 V
+15V, -4V
1020 pF @ 600 V
-
150W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
CoolSiC Series
IMZ120R045M1XKSA1
SICFET N-CH 1200V 52A TO247-4
Infineon Technologies
159
In Stock
1 : ¥128.56000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
59mOhm @ 20A, 15V
5.7V @ 10mA
52 nC @ 15 V
+20V, -10V
1900 pF @ 800 V
Current Sensing
228W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
C2D10120D
E3M0075120D
1200V AUTOMOTIVE SIC 75MOHM FET
Wolfspeed, Inc.
382
In Stock
1 : ¥170.84000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
32A (Tc)
15V
97.5mOhm @ 17.9A, 15V
3.6V @ 5mA
57 nC @ 15 V
+19V, -8V
1480 pF @ 1000 V
-
145W (Tc)
-55°C ~ 175°C (TJ)
Automotive
-
Through Hole
TO-247-3
TO-247-3
C3M0065090J
C3M0120065J
650V 120M SIC MOSFET
Wolfspeed, Inc.
1,470
In Stock
1 : ¥63.79000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
26 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
86W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4
NTH4L080N120SC1
SICFET N-CH 1200V 29A TO247-4
onsemi
405
In Stock
117,000
Factory
1 : ¥66.33000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
29A (Tc)
20V
110mOhm @ 20A, 20V
4.3V @ 5mA
56 nC @ 20 V
+25V, -15V
1670 pF @ 800 V
-
170W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
E3M0060065K
60M 650V SIC AUTOMOTIVE MOSFET
Wolfspeed, Inc.
13
In Stock
1 : ¥131.84000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
37A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 3.6mA
49 nC @ 15 V
+19V, -8V
1170 pF @ 600 V
-
131W (Tc)
-40°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0075120K-A
75M 1200V 175C SIC FET
Wolfspeed, Inc.
289
In Stock
1 : ¥161.56000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
32A (Tc)
15V
90mOhm @ 20A, 15V
3.6V @ 5mA
53 nC @ 15 V
+15V, -4V
1390 pF @ 1000 V
-
136W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4
NVH4L022N120M3S
SIC MOS TO247-4L 22MOHM 1200V
onsemi
837
In Stock
213,300
Factory
1 : ¥227.65000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
18V
30mOhm @ 40A, 18V
4.4V @ 20mA
151 nC @ 18 V
+22V, -10V
3175 pF @ 800 V
-
352W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
E3M0160120J2-TR
E3M0160120J2-TR
160m 1200V SiC FET, TO-263-7 XL
Wolfspeed, Inc.
800
In Stock
1 : ¥72.98000
Cut Tape (CT)
800 : ¥46.01841
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
18A (Tc)
15V
208mOhm @ 8.5A, 15V
3.8V @ 2.33mA
28 nC @ 15 V
+19V, -8V
730 pF @ 1000 V
-
104W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
961
In Stock
1 : ¥87.84000
Cut Tape (CT)
1,000 : ¥55.63987
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
E3M0160120J2-TR
E3M0075120J2-TR
75m, 1200V SiC FET, TO-263-7 XL
Wolfspeed, Inc.
520
In Stock
1 : ¥135.79000
Cut Tape (CT)
800 : ¥93.77806
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
34A (Tc)
15V
97.5mOhm @ 17.9A, 15V
3.8V @ 5mA
52 nC @ 15 V
+19V, -8V
1480 pF @ 1000 V
-
172W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0065100K
E3M0032120K
SIC, MOSFET, 32M, 1200V, TO-247-
Wolfspeed, Inc.
332
In Stock
1 : ¥287.09000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
67A (Tc)
15V
43mOhm @ 38.9A, 15V
3.6V @ 10.7mA
113 nC @ 15 V
+19V, -8V
3460 pF @ 1000 V
-
278W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
E3M0021120K
SIC, MOSFET, 21M, 1200V, TO-247-
Wolfspeed, Inc.
151
In Stock
1 : ¥325.34000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
104A (Tc)
15V
28.8mOhm @ 62.1A, 15V
3.6V @ 17.1mA
177 nC @ 15 V
+19V, -8V
5100 pF @ 1000 V
-
405W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
Showing
of 27

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.