Single FETs, MOSFETs

Results: 22
Manufacturer
GeneSiC SemiconductorInfineon TechnologiesLittelfuse Inc.Microchip TechnologyNexperia USA Inc.onsemiRenesas Electronics CorporationSTMicroelectronicsWolfspeed, Inc.
Series
-C2M™CoolSiC™G2R™OptiMOS™-5PolarPolar P3™PowerMESH™Z-FET™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
40 V60 V100 V1200 V1500 V1700 V2000 V4500 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)1A (Tc)2.5A (Ta)2.5A (Tc)4A (Ta), 11A (Tc)4A (Tc)4.9A (Tc)5A (Tc)5.3A (Tc)6.5A (Ta), 21A (Tc)7A (Tc)7.4A (Tc)8.4A (Ta), 31A (Tc)18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V12V, 15V15V15V, 18V20V
Rds On (Max) @ Id, Vgs
7.4mOhm @ 20A, 10V23mOhm @ 7A, 10V38mOhm @ 5A, 10V40.9mOhm @ 25.6A, 18V41mOhm @ 25A, 18V56mOhm @ 4A, 10V59mOhm @ 20A, 15V125mOhm @ 8.5A, 18V189mOhm @ 6A, 18V650mOhm @ 1.5A, 15V940mOhm @ 2.5A, 20V1.1Ohm @ 2A, 20V1.2Ohm @ 2A, 20V1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
2V @ 10µA2.7V @ 250µA3V @ 26µA3V @ 42µA3.25V @ 100µA (Typ)4V @ 100µA4V @ 250µA4V @ 500µA5V @ 250µA5.2V @ 11mA5.5V @ 500µA5.7V @ 1.7mA5.7V @ 10mA5.7V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 10 V8 nC @ 12 V8.3 nC @ 10 V10.4 nC @ 10 V11 nC @ 20 V12 nC @ 10 V13 nC @ 10 V13 nC @ 20 V13.4 nC @ 18 V17 nC @ 10 V23 nC @ 18 V23.5 nC @ 10 V29.3 nC @ 10 V44.5 nC @ 10 V
Vgs (Max)
±16V+18V, -15V+20V, -10V+20V, -7V±20V+23V, -10V+25V, -10V±30V
Input Capacitance (Ciss) (Max) @ Vds
104 pF @ 25 V111 pF @ 1000 V184 pF @ 1360 V191 pF @ 1000 V200 pF @ 1000 V256 pF @ 25 V422 pF @ 1000 V435 pF @ 30 V491 pF @ 800 V500 pF @ 50 V646 pF @ 25 V763 pF @ 800 V850 pF @ 50 V920 pF @ 25 V
FET Feature
-Current Sensing
Power Dissipation (Max)
2W (Ta), 15W (Tc)3.5W (Ta), 36W (Tc)3.6W (Ta), 49W (Tc)33W (Tc)34W (Tc)44W (Tc)68W (Tc)69W (Tc)78W (Tc)88W (Tc)100W (Tc)107W (Tc)113W (Tc)125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
5-DFN (5x6) (8-SOFL)D2PAK (7-Lead)DFN2020MD-6H2PAKPG-TO247-4-1PG-TO247-4-U02PG-TO263-7-12PG-TO263-7-13PG-TSDSON-8TO-247-3TO-247-4TO-252AATO-263-7TO-263AA
Package / Case
6-UDFN Exposed Pad8-PowerTDFN, 5 Leads8-PowerVDFNTO-247-3TO-247-4TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-3, D2PAK (2 Leads + Tab), VariantTO-263-7 (Straight Leads)TO-263-8, D2PAK (7 Leads + Tab), TO-263CATO-268-3, D3PAK (2 Leads + Tab), TO-268AATO-3P-3, SC-65-3
Stocking Options
Environmental Options
Media
Marketplace Product
22Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
6-DFN2020MD_View 2
BUK6D56-60EX
MOSFET N-CH 60V 4A/11A 6DFN
Nexperia USA Inc.
108,643
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.10427
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
4A (Ta), 11A (Tc)
4.5V, 10V
56mOhm @ 4A, 10V
2.7V @ 250µA
12 nC @ 10 V
±20V
435 pF @ 30 V
-
2W (Ta), 15W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
8-Power TDFN
IPZ40N04S5L7R4ATMA1
MOSFET N-CH 40V 40A 8TSDSON
Infineon Technologies
19,730
In Stock
1 : ¥7.39000
Cut Tape (CT)
5,000 : ¥2.64628
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
40A (Tc)
4.5V, 10V
7.4mOhm @ 20A, 10V
2V @ 10µA
17 nC @ 10 V
±16V
920 pF @ 25 V
-
34W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TSDSON-8
8-PowerVDFN
MOSFET N-CH 1500V 2.5A H2PAK
STH3N150-2
MOSFET N-CH 1500V 2.5A H2PAK
STMicroelectronics
1,895
In Stock
1 : ¥43.51000
Cut Tape (CT)
1,000 : ¥22.50734
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
2.5A (Tc)
10V
9Ohm @ 1.3A, 10V
5V @ 250µA
29.3 nC @ 10 V
±30V
939 pF @ 25 V
-
140W (Tc)
150°C (TJ)
-
-
Surface Mount
H2PAK
TO-263-3, D2PAK (2 Leads + Tab), Variant
PG-TO263-7
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
Infineon Technologies
1,771
In Stock
1 : ¥44.42000
Cut Tape (CT)
1,000 : ¥22.97768
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7.4A (Tc)
12V, 15V
650mOhm @ 1.5A, 15V
5.7V @ 1.7mA
8 nC @ 12 V
+20V, -10V
422 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
8,274
In Stock
1 : ¥44.66000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
5.5V @ 500µA
11 nC @ 20 V
+25V, -10V
111 pF @ 1000 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065090J
C2M1000170J
SICFET N-CH 1700V 5.3A D2PAK
Wolfspeed, Inc.
277
In Stock
1 : ¥87.60000
Bulk
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.3A (Tc)
20V
1.4Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
200 pF @ 1000 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK (7-Lead)
TO-263-7 (Straight Leads)
C2D10120D
C2M1000170D
SICFET N-CH 1700V 4.9A TO247-3
Wolfspeed, Inc.
2,575
In Stock
1 : ¥93.35000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
4.9A (Tc)
20V
1.1Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
191 pF @ 1000 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
1,141
In Stock
1 : ¥144.08000
Cut Tape (CT)
1,000 : ¥91.25666
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
48A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-268
IXTT02N450HV
MOSFET N-CH 4500V 200MA TO268
Littelfuse Inc.
2,365
In Stock
1 : ¥262.14000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
4500 V
200mA (Tc)
10V
750Ohm @ 10mA, 10V
6.5V @ 250µA
10.4 nC @ 10 V
±20V
256 pF @ 25 V
-
113W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
5-DFN, 8-SO Flat Lead
NVMFS040N10MCLT1G
PTNG 100V LL SO8FL
onsemi
5,044
In Stock
1 : ¥5.66000
Cut Tape (CT)
1,500 : ¥2.41992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
6.5A (Ta), 21A (Tc)
4.5V, 10V
38mOhm @ 5A, 10V
3V @ 26µA
8.3 nC @ 10 V
±20V
500 pF @ 50 V
-
3.5W (Ta), 36W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
TO-252-3
IXTY02N120P
MOSFET N-CH 1200V 200MA TO252
Littelfuse Inc.
17,887
In Stock
2,170
Factory
1 : ¥13.55000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
200mA (Tc)
10V
75Ohm @ 500mA, 10V
4V @ 100µA
4.7 nC @ 10 V
±20V
104 pF @ 25 V
-
33W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
CoolSiC_MOSFET
IMBG120R090M1HXTMA1
SICFET N-CH 1.2KV 26A TO263
Infineon Technologies
2,597
In Stock
1 : ¥70.85000
Cut Tape (CT)
1,000 : ¥40.18075
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
-
125mOhm @ 8.5A, 18V
5.7V @ 3.7mA
23 nC @ 18 V
+18V, -15V
763 pF @ 800 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-3P-3, SC-65-3; PRSS0004ZE-A
2SK1317-E
MOSFET N-CH 1500V 2.5A TO3P
Renesas Electronics Corporation
4,272
In Stock
1 : ¥73.48000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
2.5A (Ta)
15V
12Ohm @ 2A, 15V
-
-
±20V
990 pF @ 10 V
-
100W (Tc)
150°C (TJ)
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-263AB
IXTA1N200P3HV
MOSFET N-CH 2000V 1A TO263
Littelfuse Inc.
630
In Stock
1 : ¥77.25000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
2000 V
1A (Tc)
10V
40Ohm @ 500mA, 10V
4V @ 250µA
23.5 nC @ 10 V
±20V
646 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
CoolSiC Series
IMZ120R045M1XKSA1
SICFET N-CH 1200V 52A TO247-4
Infineon Technologies
159
In Stock
1 : ¥128.57000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
59mOhm @ 20A, 15V
5.7V @ 10mA
52 nC @ 15 V
+20V, -10V
1900 pF @ 800 V
Current Sensing
228W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
CoolSiC_MOSFET
IMBG120R030M1HXTMA1
SICFET N-CH 1.2KV 56A TO263
Infineon Technologies
683
In Stock
1 : ¥134.31000
Cut Tape (CT)
1,000 : ¥85.04528
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
-
41mOhm @ 25A, 18V
5.7V @ 11.5mA
63 nC @ 18 V
+18V, -15V
2290 pF @ 800 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4
MSC750SMA170B4
TRANS SJT 1700V TO247-4
Microchip Technology
170
In Stock
1 : ¥46.06000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7A (Tc)
20V
940mOhm @ 2.5A, 20V
3.25V @ 100µA (Typ)
11 nC @ 20 V
+23V, -10V
184 pF @ 1360 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
C3M0065090J-TR
C2M1000170J-TR
SICFET N-CH 1700V 5.3A D2PAK-7
Wolfspeed, Inc.
4,800
In Stock
800 : ¥60.47701
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.3A (Tc)
20V
1.4Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
200 pF @ 1000 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
5-DFN, 8-SO Flat Lead
NVMFS021N10MCLT1G
PTNG 100V LL SO8FL
onsemi
991
In Stock
1,500
Factory
1 : ¥7.06000
Cut Tape (CT)
1,500 : ¥3.01825
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8.4A (Ta), 31A (Tc)
4.5V, 10V
23mOhm @ 7A, 10V
3V @ 42µA
13 nC @ 10 V
±20V
850 pF @ 50 V
-
3.6W (Ta), 49W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
CoolSiC_MOSFET
IMBG120R140M1HXTMA1
SICFET N-CH 1.2KV 18A TO263
Infineon Technologies
20
In Stock
1 : ¥59.77000
Cut Tape (CT)
1,000 : ¥33.88441
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
18A (Tc)
-
189mOhm @ 6A, 18V
5.7V @ 2.5mA
13.4 nC @ 18 V
+18V, -15V
491 pF @ 800 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
0
In Stock
Check Lead Time
1 : ¥144.33000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
70A (Tc)
15V, 18V
40.9mOhm @ 25.6A, 18V
5.2V @ 11mA
68 nC @ 18 V
+20V, -7V
2160 pF @ 800 V
-
273W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U02
TO-247-4
TO-263AB
IXTA4N150HV
MOSFET N-CH 1500V 4A TO263
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥95.81000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
4A (Tc)
10V
6Ohm @ 500mA, 10V
5V @ 250µA
44.5 nC @ 10 V
±30V
1576 pF @ 25 V
-
280W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 22

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.