Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

STD3NK80ZT4 MOSFET N-CH 800V 2.5A DPAK STMicroelectronics	7,148 In Stock	1 : ¥13.05000 Cut Tape (CT) 2,500 : ¥5.88888 Tape & Reel (TR)	SuperMESH™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	2.5A (Tc)	10V	4.5Ohm @ 1.25A, 10V	4.5V @ 50µA	19 nC @ 10 V	±30V	485 pF @ 25 V	-	70W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFP4468PBF MOSFET N-CH 100V 195A TO247AC Infineon Technologies	499 In Stock	1 : ¥61.65000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	195A (Tc)	10V	2.6mOhm @ 180A, 10V	4V @ 250µA	540 nC @ 10 V	±20V	19860 pF @ 50 V	-	520W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
PMXB75UPEZ MOSFET P-CH 20V 2.9A DFN1010D-3 Nexperia USA Inc.	35,739 In Stock	1 : ¥2.30000 Cut Tape (CT) 5,000 : ¥0.50078 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	2.9A (Ta)	1.2V, 4.5V	85mOhm @ 2.9A, 4.5V	1V @ 250µA	12 nC @ 4.5 V	±8V	608 pF @ 10 V	-	317mW (Ta), 8.33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DFN1010D-3	3-XDFN Exposed Pad
SPD02N80C3ATMA1 MOSFET N-CH 800V 2A TO252-3 Infineon Technologies	5,405 In Stock	1 : ¥10.26000 Cut Tape (CT) 2,500 : ¥4.25785 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	2A (Tc)	10V	2.7Ohm @ 1.2A, 10V	3.9V @ 120µA	16 nC @ 10 V	±20V	290 pF @ 100 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
STP80NF10 MOSFET N-CH 100V 80A TO220AB STMicroelectronics	204 In Stock	1 : ¥25.78000 Tube	STripFET™ II	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	80A (Tc)	10V	15mOhm @ 40A, 10V	4V @ 250µA	182 nC @ 10 V	±20V	5500 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
FDPF190N15A MOSFET N-CH 150V 27.4A TO220F onsemi	8 In Stock	1 : ¥23.23000 Tube	PowerTrench®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	27.4A (Tc)	10V	19mOhm @ 27.4A, 10V	4V @ 250µA	39 nC @ 10 V	±20V	2685 pF @ 25 V	-	33W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.