Single FETs, MOSFETs

Results: 14
Manufacturer
Infineon TechnologiesQorvoSTMicroelectronics
Series
-CoolMOS™CoolSiC™CoolSiC™ Gen 2MDmesh™ V
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
600 V650 V750 V1200 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)33A (Tc)47A (Tc)50A (Tc)53A (Tc)72A (Tc)81A (Tc)104A (Tc)106A (Tc)120A (Tc)138A (Tc)210A (Tc)238A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V12V15V, 20V18V
Rds On (Max) @ Id, Vgs
6.1mOhm @ 146.3A, 20V7.2mOhm @ 80A, 12V8.5mOhm @ 146.3A, 18V10mOhm @ 50A, 12V11.4mOhm @ 70A, 12V11.5mOhm @ 70A, 12V14.2mOhm @ 60A, 12V15mOhm @ 69A, 10V23mOhm @ 20A, 12V23mOhm @ 50A, 12V29mOhm @ 40A, 12V41mOhm @ 30A, 12V74mOhm @ 20A, 12V105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.5V @ 3.08mA5V @ 1mA5V @ 250µA5.5V @ 10mA5.6V @ 2.97mA5.6V @ 29.7mA6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
37.8 nC @ 15 V63 nC @ 18 V75 nC @ 15 V164 nC @ 15 V179 nC @ 18 V318 nC @ 12 V414 nC @ 10 V
Vgs (Max)
±20V+22V, -10V+23V, -7V±25V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 800 V1400 pF @ 400 V1414 pF @ 400 V1422 pF @ 100 V1430 pF @ 800 V3245 pF @ 400 V3340 pF @ 400 V6359 pF @ 400 V8374 pF @ 400 V11987 pF @ 300 V18500 pF @ 100 V
Power Dissipation (Max)
155W (Tc)242W (Tc)250W (Tc)259W (Tc)357W (Tc)375W (Tc)385W (Tc)600W (Tc)625W (Tc)694W (Tc)789W (Tc)1153W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAK-7H2PAK-7MAX247™PG-HDSOP-22-1PG-TO247-4-U02PG-TO263-7-12TO-247-4TOLL
Package / Case
8-PowerSFN22-PowerBSOP ModuleTO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
14Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-4L
UJ4C075033K4S
750V/33MOHM, SIC, CASCODE, G4, T
Qorvo
575
In Stock
1 : ¥88.26000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
47A (Tc)
12V
41mOhm @ 30A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1400 pF @ 400 V
-
242W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
UF3C120080B7S
UJ4SC075018B7S
750V/18MOHM, N-OFF SIC STACK CAS
Qorvo
2,085
In Stock
1 : ¥146.30000
Cut Tape (CT)
800 : ¥86.20295
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
72A (Tc)
12V
23mOhm @ 50A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1414 pF @ 400 V
-
259W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4L
UF4SC120023K4S
1200V/23MOHM SIC STACKED FAST CA
Qorvo
1,487
In Stock
1 : ¥255.08000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
53A (Tc)
12V
29mOhm @ 40A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1430 pF @ 800 V
-
385W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
IMBG65R007M2HXTMA1
IMBG65R007M2HXTMA1
SICFET N-CH 650V 238A TO263-7
Infineon Technologies
205
In Stock
1 : ¥313.86000
Cut Tape (CT)
1,000 : ¥211.42644
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
238A (Tc)
15V, 20V
8.5mOhm @ 146.3A, 18V
5.6V @ 2.97mA
179 nC @ 18 V
+23V, -7V
6359 pF @ 400 V
-
789W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4L
UJ4SC075009K4S
750V/9MOHM, SIC, STACKED CASCODE
Qorvo
285
In Stock
1 : ¥343.83000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
106A (Tc)
12V
11.5mOhm @ 70A, 12V
5.5V @ 10mA
75 nC @ 15 V
±20V
3340 pF @ 400 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
SICFET N-CH 750V 120A TOLL
UJ4SC075005L8S
SICFET N-CH 750V 120A TOLL
Qorvo
106
In Stock
1 : ¥710.72000
Cut Tape (CT)
2,000 : ¥567.50274
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
120A (Tc)
12V
7.2mOhm @ 80A, 12V
6V @ 10mA
164 nC @ 15 V
±20V
8374 pF @ 400 V
-
1153W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
TO-247-4L
UJ4C075018K4S
SICFET N-CH 750V 81A TO247-4
Qorvo
570
In Stock
1 : ¥146.05000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
81A (Tc)
-
23mOhm @ 20A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1422 pF @ 100 V
-
385W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4L
UJ4C075060K4S
SICFET N-CH 750V 28A TO247-4
Qorvo
1,687
In Stock
1 : ¥69.70000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
28A (Tc)
-
74mOhm @ 20A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1422 pF @ 100 V
-
155W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
496
In Stock
1 : ¥328.32000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
210A (Tc)
15V, 20V
6.1mOhm @ 146.3A, 20V
5.6V @ 29.7mA
179 nC @ 18 V
+23V, -7V
6359 pF @ 400 V
-
625W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U02
TO-247-4
SICFET N-CH 750V 106A TOLL
UJ4SC075008L8S
SICFET N-CH 750V 106A TOLL
Qorvo
22
In Stock
1 : ¥414.10000
Cut Tape (CT)
2,000 : ¥195.80384
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
106A (Tc)
12V
11.4mOhm @ 70A, 12V
5.5V @ 10mA
75 nC @ 15 V
±20V
3340 pF @ 400 V
-
600W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
IPDQ60R010S7XTMA1
IPDQ60R010S7XTMA1
HIGH POWER_NEW PG-HDSOP-22
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥163.79000
Cut Tape (CT)
750 : ¥117.10936
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
50A (Tc)
12V
10mOhm @ 50A, 12V
4.5V @ 3.08mA
318 nC @ 12 V
±20V
11987 pF @ 300 V
-
694W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
TO-247-3 Max EP
STY145N65M5
MOSFET N-CH 650V 138A MAX247
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥299.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
138A (Tc)
10V
15mOhm @ 69A, 10V
5V @ 250µA
414 nC @ 10 V
±25V
18500 pF @ 100 V
-
625W (Tc)
150°C (TJ)
-
-
Through Hole
MAX247™
TO-247-3
UF3C120080B7S
UJ4SC075011B7S
750V/11MOHM, N-OFF SIC STACK CAS
Qorvo
0
In Stock
Check Lead Time
1 : ¥241.37000
Cut Tape (CT)
800 : ¥154.75481
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
104A (Tc)
12V
14.2mOhm @ 60A, 12V
5.5V @ 10mA
75 nC @ 15 V
±20V
3245 pF @ 400 V
-
357W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
H2PAK-7
SCTH40N120G2V7AG
SICFET N-CH 650V 33A H2PAK-7
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥140.14000
Cut Tape (CT)
1,000 : ¥88.77721
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
33A (Tc)
18V
105mOhm @ 20A, 18V
5V @ 1mA
63 nC @ 18 V
+22V, -10V
1230 pF @ 800 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.