Gate drive can be approximated as the Q_G total divided by the on/off time. So, if the customer wants to turn on the NTH4L022N120M3S 1200 V, 22 mΩ silicon carbon MOSFET with 140 nC of total gate charge, in 33 ns it will require approximately 4.24 A of gate drive source current. This is a first-order approximation. The NCP51561 supports 4.5 A source gate drive for turn-on and 9 A sink gate drive for turn-off. Therefore, the NCP51561 gate driver is an ideal pairing for the 1200 V, 22 mΩ NTH4L022N120M3S silicon carbide MOSFET.