Welcome to the onsemi SiC Gate Drivers product training module. This presentation will introduce the NCP51561 5 kV isolation silicon carbide silicon junction MOSFET gate driver. It will discuss turning on and off a silicon junction MOSFET versus a silicon carbide MOSFET. Gate driver undervoltage lockout will be explained relative to the Miller plateau region of both silicon junction and silicon carbide MOSFETs. It will also explain the benefits of the NCP51561 negative bias driving silicon carbide MOSFETs during turn-off. Finally, this module will explore a first-order approximation for gate drive strength calculation for the NTH4L022N120M3S 1200 V, 22 mΩ silicon carbide MOSFET.