SiC Gate Drivers
onsemi
This presentation will introduce onsemi's NCP51561 5 kV isolation silicon carbide, silicon junction MOSFET gate driver. It will discuss turning on and off a silicon junction MOSFET versus a silicon carbide MOSFET. Gate driver undervoltage lockout will be explained relative to the Miller plateau region of both silicon junction and silicon carbide MOSFETs. It will also explain the benefits of the NCP51561 negative bias driving silicon carbide MOSFETs during turn off. Finally, this module will explore a first-order approximation for gate drive strength calculation for the NTH4L022N120M3S 1200 V, 22 mΩ silicon carbide MOSFET.
Related Parts
图片 | 制造商零件编号 | 描述 | 可供货数量 | 价格 | 查看详情 | |
---|---|---|---|---|---|---|
NCP51561DADWR2G | DGTL ISO 5KV 2CH GATE DVR 16SOIC | 387 - 立即发货 | $41.27 | 查看详情 | ||
NCP51561BADWR2G | DGTL ISO 5KV 2CH GATE DVR 16SOIC | 1716 - 立即发货 2000 - 厂方库存 | $41.27 | 查看详情 | ||
NCP51561BBDWR2G | DGTL ISO 5KV 2CH GATE DVR 16SOIC | 763 - 立即发货 17000 - 厂方库存 | $41.27 | 查看详情 | ||
NCP51561DBDWR2G | DGTL ISO 5KV 2CH GATE DVR 16SOIC | 955 - 立即发货 4000 - 厂方库存 | $41.27 | 查看详情 |