In summary, the important factors for semiconductor device selection in Power Factor Correction converters are that MOSFET and diode currents are extreme under low line boundary conditions. Peak MOSFET current is a function of both line input current and inductor ripple current. MOSFET turn-on losses are a function of diode behavior, so selection of a diode such as Infineon’s silicon carbide may be critical for achieving the highest possible efficiency. Diode duty cycle low and peak to average current ratio can result in high diode losses at low line voltage. High surge current capability, such as exhibited by Infineon’s Silicon carbide MPS diodes may be critical to robust operation. Optimal efficiency requires low Qrr in the boost diode, and low output capacitance and fast switching in the Power MOSFET. The recommended components are the Infineon CoolMOS™ CP series of high-performance power MOSFETs and the third Generation thinQ!™ Silicon Carbide Schottky Diodes. For more information, please visit the Infineon website.