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Welcome to EPC’s eGaN® FET Reliability product training module. This presentation will discuss the reliability of commercially available enhancement mode gallium nitride transistors from EPC. Large populations of eGaN FETs were tested from multiple device lots in a wide variety of high-stress conditions. It will discuss the reliability qualification of EPC’s eGaN® FETs under a wide variety of stress conditions and the failure rate predictions using acceleration factors derived by stressing devices outside of normal operating conditions. The tutorial will highlight the eGaN FET’s reliability compared with conventional silicon MOSFETs as well as silicon carbide MOSFETs. 

PTM Published on: 2011-04-06
PTM Updated on: 2016-03-30