Single Bipolar Transistors

Results: 3
Current - Collector (Ic) (Max)
15 A16 A20 A
Voltage - Collector Emitter Breakdown (Max)
60 V90 V250 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 5A, 20A3V @ 3.3A, 10A4V @ 3.2A, 16A
Current - Collector Cutoff (Max)
100µA700µA-
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 12A, 5V20 @ 4A, 4V25 @ 8A, 5V
Power - Max
115 W140 W250 W
Frequency - Transition
2.5MHz4MHz-
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-3 Pkg
2N3055G
TRANS NPN 60V 15A TO204
onsemi
1,197
In Stock
4,200
Factory
1 : ¥37.03000
Tray
-
Tray
Active
NPN
15 A
60 V
3V @ 3.3A, 10A
700µA
20 @ 4A, 4V
115 W
2.5MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-3 Pkg
MJ21196G
TRANS NPN 250V 16A TO204
onsemi
283
In Stock
3,500
Factory
1 : ¥65.43000
Tray
-
Tray
Active
NPN
16 A
250 V
4V @ 3.2A, 16A
100µA
25 @ 8A, 5V
250 W
4MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-3 Pkg
2N5038G
TRANS NPN 90V 20A TO204
onsemi
585
In Stock
1,500
Factory
1 : ¥89.65000
Tray
-
Tray
Active
NPN
20 A
90 V
2.5V @ 5A, 20A
-
20 @ 12A, 5V
140 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
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of 3

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.