Single FETs, MOSFETs

Results: 4
Series
CoolMOS™ G7CoolMOS™ P6CoolMOS™ P7
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
600 V650 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)20.2A (Tc)31A (Tc)75A (Tc)
Rds On (Max) @ Id, Vgs
28mOhm @ 28.8A, 10V99mOhm @ 10.5A, 10V180mOhm @ 5.6A, 10V190mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id
4V @ 1.44mA4V @ 280µA4V @ 530µA4.5V @ 630µ
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V25 nC @ 10 V45 nC @ 10 V123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1081 pF @ 400 V1750 pF @ 100 V1952 pF @ 400 V4820 pF @ 400 V
Power Dissipation (Max)
72W (Tc)117W (Tc)151W (Tc)391W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-HSOF-8-2PG-TO220-3
Package / Case
8-PowerSFNTO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
IPP60R190P6XKSA1
MOSFET N-CH 600V 20.2A TO220-3
Infineon Technologies
11,032
In Stock
1 : ¥22.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
190mOhm @ 7.6A, 10V
4.5V @ 630µ
11 nC @ 10 V
±20V
1750 pF @ 100 V
-
151W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
PG-HSOF-8-2
IPT60R028G7XTMA1
MOSFET N-CH 600V 75A 8HSOF
Infineon Technologies
4,433
In Stock
1 : ¥112.88000
Cut Tape (CT)
2,000 : ¥66.51140
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
75A (Tc)
10V
28mOhm @ 28.8A, 10V
4V @ 1.44mA
123 nC @ 10 V
±20V
4820 pF @ 400 V
-
391W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-2
8-PowerSFN
TO-220-3
IPP60R099P7XKSA1
MOSFET N-CH 600V 31A TO220-3
Infineon Technologies
1,933
In Stock
1 : ¥29.72000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
31A (Tc)
10V
99mOhm @ 10.5A, 10V
4V @ 530µA
45 nC @ 10 V
±20V
1952 pF @ 400 V
-
117W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
PG-TO-220
IPP60R180P7XKSA1
MOSFET N-CH 650V 18A TO220-3
Infineon Technologies
8,405
In Stock
1 : ¥18.47000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
18A (Tc)
10V
180mOhm @ 5.6A, 10V
4V @ 280µA
25 nC @ 10 V
±20V
1081 pF @ 400 V
-
72W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.