Single FETs, MOSFETs

Results: 6
Series
-HiPerFET™, Polar™SuperFET® IISuperFET® III
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
600 V650 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)10.2A (Tc)12A (Tc)30A (Tc)37A (Tc)46A (Tc)
Rds On (Max) @ Id, Vgs
65mOhm @ 23A, 10V104mOhm @ 18.5A, 10V110mOhm @ 15A, 10V260mOhm @ 6A, 10V360mOhm @ 5A, 10V380mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA4.5V @ 1.2mA4.5V @ 1mA5V @ 250µA5V @ 3mA5V @ 4.6mA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V24 nC @ 10 V45 nC @ 10 V58 nC @ 10 V98 nC @ 10 V139 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
730 pF @ 400 V1010 pF @ 400 V1770 pF @ 25 V2560 pF @ 400 V4075 pF @ 400 V5950 pF @ 100 V
Power Dissipation (Max)
83W (Tc)90W (Tc)106W (Tc)240W (Tc)337W (Tc)357W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-220-3TO-247-3TO-252 (DPAK)TO-252AA
Package / Case
TO-220-3TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252AA
FCD380N60E
MOSFET N-CH 600V 10.2A DPAK
onsemi
4,791
In Stock
1 : ¥19.21000
Cut Tape (CT)
2,500 : ¥8.66377
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
10.2A (Tc)
10V
380mOhm @ 5A, 10V
3.5V @ 250µA
45 nC @ 10 V
±20V
1770 pF @ 25 V
-
106W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-247-3
NTHL065N65S3F
MOSFET N-CH 650V 46A TO247-3
onsemi
6,596
In Stock
1 : ¥97.94000
Tube
-
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
65mOhm @ 23A, 10V
5V @ 4.6mA
98 nC @ 10 V
±30V
4075 pF @ 400 V
-
337W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-252 DPAK
FCD360N65S3R0
MOSFET N-CH 650V 10A DPAK
onsemi
5,000
In Stock
12,500
Factory
1 : ¥18.06000
Cut Tape (CT)
2,500 : ¥7.58176
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
10A (Tc)
10V
360mOhm @ 5A, 10V
4.5V @ 1mA
18 nC @ 10 V
±30V
730 pF @ 400 V
-
83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-247-3 AD EP
FCH104N60F
MOSFET N-CH 600V 37A TO247-3
onsemi
405
In Stock
1 : ¥38.50000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
37A (Tc)
10V
104mOhm @ 18.5A, 10V
5V @ 250µA
139 nC @ 10 V
±20V
5950 pF @ 100 V
-
357W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3
NTHL110N65S3F
MOSFET N-CH 650V 30A TO247-3
onsemi
900
In Stock
1 : ¥42.20000
Tube
-
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
30A (Tc)
10V
110mOhm @ 15A, 10V
5V @ 3mA
58 nC @ 10 V
±30V
2560 pF @ 400 V
-
240W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-220-3
FCP260N65S3
MOSFET N-CH 650V 12A TO220-3
onsemi
0
In Stock
Check Lead Time
800 : ¥13.40764
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
12A (Tc)
10V
260mOhm @ 6A, 10V
4.5V @ 1.2mA
24 nC @ 10 V
±30V
1010 pF @ 400 V
-
90W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.