Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NTBG014N120M3P SIC MOSFET 1200 V 14 MOHM M3P SE onsemi	1,066 In Stock	1 : ¥238.08000 Cut Tape (CT) 800 : ¥157.90544 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	104A (Tc)	15V, 18V	20mOhm @ 74A, 18V	4.63V @ 37mA	337 nC @ 18 V	+22V, -10V	6313 pF @ 800 V	-	454W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R012M2HXTMA1 SIC DISCRETE Infineon Technologies	998 In Stock	1 : ¥274.95000 Cut Tape (CT) 1,000 : ¥179.52454 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	144A (Tc)	15V, 18V	12.2mOhm @ 56.7A, 18V	5.1V @ 17.8mA	124 nC @ 18 V	+23V, -10V	4050 pF @ 800 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R007M2HXTMA1 SICFET N-CH 650V 238A TO263-7 Infineon Technologies	205 In Stock	1 : ¥313.86000 Cut Tape (CT) 1,000 : ¥211.42644 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	238A (Tc)	15V, 20V	8.5mOhm @ 146.3A, 18V	5.6V @ 2.97mA	179 nC @ 18 V	+23V, -7V	6359 pF @ 400 V	-	789W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
AIMBG120R010M1XTMA1 SIC_DISCRETE Infineon Technologies	700 In Stock	1 : ¥411.72000 Cut Tape (CT) 1,000 : ¥285.20713 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	187A	-	-	-	-	-	-	-	-	-55°C ~ 175°C	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMZA120R007M1HXKSA1 SIC DISCRETE Infineon Technologies	133 In Stock	1 : ¥488.81000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	225A (Tc)	15V, 18V	9.9mOhm @ 108A, 18V	5.2V @ 47mA	289 nC @ 18 V	+20V, -5V	9170 pF @ 800 V	-	750W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8	TO-247-4
UJ4SC075005L8S SICFET N-CH 750V 120A TOLL Qorvo	128 In Stock	1 : ¥710.72000 Cut Tape (CT) 2,000 : ¥567.50274 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	120A (Tc)	12V	7.2mOhm @ 80A, 12V	6V @ 10mA	164 nC @ 15 V	±20V	8374 pF @ 400 V	-	1153W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TOLL	8-PowerSFN
IMBG120R078M2HXTMA1 SIC DISCRETE Infineon Technologies	781 In Stock	1 : ¥67.07000 Cut Tape (CT) 1,000 : ¥38.03520 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	29A (Tc)	15V, 18V	78.1mOhm @ 8.9A, 18V	5.1V @ 2.8mA	20.6 nC @ 18 V	+23V, -10V	700 pF @ 800 V	-	158W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT4018KW7TL 1200V, 75A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	900 In Stock	1 : ¥303.35000 Cut Tape (CT) 1,000 : ¥194.51079 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	75A (Tj)	18V	23.4mOhm @ 42A, 18V	4.8V @ 22.2mA	170 nC @ 18 V	+21V, -4V	4532 pF @ 800 V	-	267W	175°C (TJ)	-	-	Surface Mount	TO-263-7L	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R181M2HXTMA1 SIC DISCRETE Infineon Technologies	958 In Stock	1 : ¥53.45000 Cut Tape (CT) 1,000 : ¥27.62960 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	14.9A (Tc)	15V, 18V	181.4mOhm @ 3.9A, 18V	5.1V @ 1.2mA	9.7 nC @ 18 V	+23V, -10V	350 pF @ 800 V	-	94W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R040M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	482 In Stock	1 : ¥84.23000 Cut Tape (CT) 1,000 : ¥47.79535 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	49A (Tc)	15V, 20V	49mOhm @ 22.9A, 18V	5.6V @ 4.6mA	28 nC @ 18 V	+23V, -7V	997 pF @ 400 V	-	197W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.