Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NTBG015N065SC1 SILICON CARBIDE MOSFET, NCHANNEL onsemi	1,109 In Stock 7,200 Factory	1 : ¥223.31000 Cut Tape (CT) 800 : ¥148.07511 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	145A (Tc)	15V, 18V	18mOhm @ 75A, 18V	4.3V @ 25mA	283 nC @ 18 V	+22V, -8V	4689 pF @ 325 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R007M2HXTMA1 SICFET N-CH 650V 238A TO263-7 Infineon Technologies	192 In Stock	1 : ¥313.86000 Cut Tape (CT) 1,000 : ¥211.42644 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	238A (Tc)	15V, 20V	8.5mOhm @ 146.3A, 18V	5.6V @ 2.97mA	179 nC @ 18 V	+23V, -7V	6359 pF @ 400 V	-	789W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NTBG025N065SC1 SILICON CARBIDE (SIC) MOSFET - 1 onsemi	2,227 In Stock	1 : ¥162.96000 Cut Tape (CT) 800 : ¥112.50285 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	106A (Tc)	15V, 18V	28.5mOhm @ 45A, 18V	4.3V @ 15.5mA	164 nC @ 18 V	+22V, -8V	3480 pF @ 325 V	-	395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
AIMDQ75R016M1HXUMA1 SICFET N-CH 750V PG-HDSOP-22 Infineon Technologies	435 In Stock	1 : ¥172.32000 Cut Tape (CT) 750 : ¥114.27697 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	98A (Tc)	0V, 18V	22mOhm @ 41.5A, 18V	5.6V @ 14.9mA	80 nC @ 18 V	+23V, -5V	2869 pF @ 500 V	-	384W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
C3M0025065L-TR SIC, MOSFET, 25M, 650V, TOLL, T& Wolfspeed, Inc.	1,845 In Stock	1 : ¥262.80000 Cut Tape (CT) 2,000 : ¥168.50624 Tape & Reel (TR)	C3M™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	77A (Tc)	15V	34mOhm @ 33.5A, 15V	3.6V @ 9.22mA	111 nC @ 15 V	-8V, +19V	2970 pF @ 400 V	-	326W (Tc)	-40°C ~ 175°C (TJ)	-	-	Surface Mount	TOLL	8-PowerSFN
IMBG65R030M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	924 In Stock	1 : ¥105.82000 Cut Tape (CT) 1,000 : ¥66.99980 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	63A (Tc)	18V	42mOhm @ 29.5A, 18V	5.7V @ 8.8mA	49 nC @ 18 V	+23V, -5V	1643 pF @ 400 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R015M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	0 In Stock Check Lead Time	1 : ¥163.29000 Cut Tape (CT) 1,000 : ¥109.99808 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	115A (Tc)	15V, 20V	18mOhm @ 64.2A, 18V	5.6V @ 13mA	79 nC @ 18 V	+23V, -7V	2792 pF @ 400 V	-	416W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.