Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

IKQ140N120CH7XKSA1 IGBT TRENCH FS 1200V 175A TO247 Infineon Technologies	653 In Stock	1 : ¥129.14000 Tube	TRENCHSTOP™	Tube	Active	Trench Field Stop	1200 V	175 A	560 A	2.15V @ 15V, 140A	962 W	8.84mJ (on), 3.38mJ (off)	Standard	970 nC	68ns/541ns	-	144 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	PG-TO247-3-U01
IKQ150N65EH7XKSA1 IGBT TRENCH FS 650V 160A TO247-3 Infineon Technologies	164 In Stock	1 : ¥105.41000 Tube	TRENCHSTOP™	Tube	Active	Trench Field Stop	650 V	160 A	600 A	1.65V @ 15V, 150A	621 W	5.8mJ (on), 5.4mJ (off)	Standard	301 nC	45ns/341ns	400V, 150A, 10Ohm, 15V	84 ns	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	PG-TO247-3-46
IKW50N65RH5XKSA1 IGBT TRENCH FS 650V 80A TO247-3 Infineon Technologies	70 In Stock	1 : ¥52.95000 Tube	TrenchStop™ 5	Tube	Active	Trench Field Stop	650 V	80 A	200 A	2.1V @ 15V, 50A	305 W	230µJ (on), 180µJ (off)	Standard	120 nC	22ns/180ns	400V, 25A, 12Ohm, 15V	-	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	PG-TO247-3

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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.