Single IGBTs

Results: 5
Manufacturer
International RectifierIXYSMicrochip Technology
Series
-GenX3™, XPT™XPT™XPT™, GenX4™
Packaging
BulkTube
IGBT Type
-NPTPTTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)
900 V1200 V
Current - Collector (Ic) (Max)
80 A245 A310 A340 A375 A
Current - Collector Pulsed (Icm)
160 A300 A800 A840 A900 A
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 110A2.1V @ 15V, 100A2.1V @ 15V, 110A2.7V @ 15V, 140A3.71V @ 15V, 50A
Power - Max
595 W960 W1360 W1630 W
Switching Energy
1.4mJ (on), 1.65mJ (off)2.5mJ (on), 8.4mJ (off)3.6mJ (on), 3.85mJ (off)4.3mJ (on), 4mJ (off)11mJ (on), 9.5mJ (off)
Gate Charge
305 nC330 nC340 nC540 nC
Td (on/off) @ 25°C
40ns/145ns42ns/550ns45ns/390ns50ns/615ns-
Test Condition
450V, 100A, 1Ohm, 15V600V, 40A, 4.7Ohm, 15V600V, 50A, 1.5Ohm, 15V600V, 50A, 2Ohm, 15V800V, 100A, 1Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Package / Case
TO-247-3TO-247-3 VariantTO-264-3, TO-264AATO-274AA
Supplier Device Package
SUPER-247™ (TO-274AA)TO-247 (IXTH)TO-264 (IXYK)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IXYK140N90C3
IXYK140N90C3
IGBT 900V 310A 1630W TO264
IXYS
382
In Stock
1 : ¥233.73000
Tube
Tube
Active
-
900 V
310 A
840 A
2.7V @ 15V, 140A
1630 W
4.3mJ (on), 4mJ (off)
Standard
330 nC
40ns/145ns
450V, 100A, 1Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXYK)
Littelfuse_Power_Semi_TO-264
IXYK110N120B4
IGBT 1200V 110A GEN4 XPT TO264
IXYS
300
In Stock
1 : ¥175.85000
Tube
Tube
Active
-
1200 V
340 A
800 A
2.1V @ 15V, 110A
1360 W
3.6mJ (on), 3.85mJ (off)
Standard
340 nC
45ns/390ns
600V, 50A, 2Ohm, 15V
50 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXYK)
IFEINFAIGW50N65F5XKSA1
IRGPS40B120UPBF
ULTRAFAST CO-PACK IGBT W/ULTRAFA
International Rectifier
1,050
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
NPT
1200 V
80 A
160 A
3.71V @ 15V, 50A
595 W
1.4mJ (on), 1.65mJ (off)
Standard
340 nC
-
600V, 40A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-274AA
SUPER-247™ (TO-274AA)
T-MAX Pkg
APT100GN120B2G
IGBT TRENCH FIELD STP 1200V 245A
Microchip Technology
29
In Stock
1 : ¥241.86000
Tube
-
Tube
Active
Trench Field Stop
1200 V
245 A
300 A
2.1V @ 15V, 100A
960 W
11mJ (on), 9.5mJ (off)
Standard
540 nC
50ns/615ns
800V, 100A, 1Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
IXYX110N120A4
IXYX110N120A4
IGBT 1200V 110A GNX4 XPT PLUS247
IXYS
4
In Stock
1 : ¥231.76000
Tube
Tube
Active
PT
1200 V
375 A
900 A
1.8V @ 15V, 110A
1360 W
2.5mJ (on), 8.4mJ (off)
Standard
305 nC
42ns/550ns
600V, 50A, 1.5Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.