JFETs

Results: 3
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Voltage - Breakdown (V(BR)GSS)
25 V30 V
Drain to Source Voltage (Vdss)
25 V30 V
Current - Drain (Idss) @ Vds (Vgs=0)
1 mA @ 15 V24 mA @ 10 V30 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id
500 mV @ 10 nA2.5 V @ 1 nA3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds
5pF @ 10V (VGS)7pF @ 15V14pF @ 15V (VGS)
Power - Max
225 mW350 mW
Supplier Device Package
SOT-23-3SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-23-3
MMBF5457
JFET N-CH 25V SOT23-3
onsemi
45,382
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.02259
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
25 V
-
1 mA @ 15 V
500 mV @ 10 nA
7pF @ 15V
-
350 mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SOT 23-3
SMMBF4393LT1G
JFET N-CH 30V SOT23-3
onsemi
33,113
In Stock
6,000
Factory
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.43710
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
30 V
30 V
30 mA @ 15 V
3 V @ 10 nA
14pF @ 15V (VGS)
100 Ohms
225 mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SOT 23-3
MMBFU310LT1G
JFET N-CH 25V SOT23-3
onsemi
0
In Stock
Check Lead Time
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥0.93102
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
25 V
25 V
24 mA @ 10 V
2.5 V @ 1 nA
5pF @ 10V (VGS)
-
225 mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
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JFETs


Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.