Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

IXBH12N300 IGBT 3000V 30A 160W TO247 IXYS	298 In Stock	1 : ¥273.46000 Tube	BIMOSFET™	Tube	Active	-	3000 V	30 A	100 A	3.2V @ 15V, 12A	160 W	-	Standard	62 nC	-	-	1.4 µs	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD
IGW30N60TPXKSA1 IGBT TRENCH/FS 600V 53A TO247-3 Infineon Technologies	4,476 In Stock	1 : ¥20.61000 Tube	TrenchStop™	Tube	Not For New Designs	Trench Field Stop	600 V	53 A	90 A	1.8V @ 15V, 30A	200 W	710µJ (on), 420µJ (off)	Standard	130 nC	15ns/179ns	400V, 30A, 10.5Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IXYF30N450 IGBT 4500V 23A ISOPLUSI4 IXYS	0 In Stock 550 Factory Check Lead Time	1 : ¥990.97000 Tube	XPT™	Tube	Active	-	4500 V	23 A	190 A	3.9V @ 15V, 30A	230 W	-	Standard	88 nC	38ns/168ns	960V, 30A, 15Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUSi5-PAK™	ISOPLUS i4-PAC™

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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.