Single IGBTs

Results: 4
Series
TrenchStop®TRENCHSTOP™
IGBT Type
-Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
600 V1200 V
Current - Collector (Ic) (Max)
21 A30 A40 A80 A
Current - Collector Pulsed (Icm)
24 A60 A225 A
Vce(on) (Max) @ Vge, Ic
1.75V @ 15V, 20A2V @ 15V, 75A2V @ 15V, 8A2.4V @ 15V, 15A
Power - Max
106 W217 W288 W428 W
Switching Energy
370µJ (on), 400µJ (off)750µJ (off)1.55mJ4.5mJ
Gate Charge
52 nC75 nC170 nC470 nC
Td (on/off) @ 25°C
17ns/160ns21ns/260ns33ns/330ns-/260ns
Test Condition
400V, 75A, 5Ohm, 15V600V, 15A, 35Ohm, 15V600V, 20A, 10Ohm, 15V600V, 8A, 20Ohm, 15V
Reverse Recovery Time (trr)
121 ns130 ns260 ns
Supplier Device Package
PG-TO247-3PG-TO247-3-1
Stocking Options
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Marketplace Product
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Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
975
In Stock
1 : ¥36.62000
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-
1200 V
40 A
60 A
1.75V @ 15V, 20A
288 W
750µJ (off)
Standard
170 nC
-/260ns
600V, 20A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
PG-TO247-3
IKW75N60TFKSA1
IGBT TRENCH FS 600V 80A TO247-3
Infineon Technologies
3,752
In Stock
1 : ¥68.47000
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Trench Field Stop
600 V
80 A
225 A
2V @ 15V, 75A
428 W
4.5mJ
Standard
470 nC
33ns/330ns
400V, 75A, 5Ohm, 15V
121 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
PG-TO247-3
IKW15N120H3FKSA1
IGBT TRENCH FS 1200V 30A TO247-3
Infineon Technologies
202
In Stock
1 : ¥44.91000
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Trench Field Stop
1200 V
30 A
60 A
2.4V @ 15V, 15A
217 W
1.55mJ
Standard
75 nC
21ns/260ns
600V, 15A, 35Ohm, 15V
260 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
PG-TO247-3
IKW08N120CS7XKSA1
IGBT TRENCH FS 1200V 21A TO247-3
Infineon Technologies
126
In Stock
1 : ¥46.80000
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Trench Field Stop
1200 V
21 A
24 A
2V @ 15V, 8A
106 W
370µJ (on), 400µJ (off)
Standard
52 nC
17ns/160ns
600V, 8A, 20Ohm, 15V
130 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.