Cambridge GaN Devices Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

CGD65B240SH2 650V GAN HEMT, 240MOHM, DFN5X6. Cambridge GaN Devices	5,000 In Stock	1 : ¥35.63000 Cut Tape (CT) 5,000 : ¥17.21496 Tape & Reel (TR)	ICeGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	GaNFET (Gallium Nitride)	650 V	7A	12V	336mOhm @ 500mA, 12V	4.2V @ 2.3mA	1.2 nC @ 12 V	+20V, -1V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)	8-PowerVDFN
CGD65B200S2-T13 650V GAN HEMT, 200MOHM, DFN5X6. Cambridge GaN Devices	4,228 In Stock	1 : ¥37.35000 Cut Tape (CT) 5,000 : ¥17.44583 Tape & Reel (TR)	ICeGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	-	GaNFET (Gallium Nitride)	650 V	8.5A (Tc)	9V, 20V	280mOhm @ 600mA, 12V	4.2V @ 2.75mA	1.4 nC @ 12 V	+20V, -1V	Current Sensing	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)	8-PowerVDFN
CGD65A130SH2 650V GAN HEMT, 130MOHM, DFN8X8. Cambridge GaN Devices	3,485 In Stock	1 : ¥50.16000 Cut Tape (CT) 3,500 : ¥26.64272 Tape & Reel (TR)	ICeGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	GaNFET (Gallium Nitride)	650 V	12A	12V	182mOhm @ 900mA, 12V	4.2V @ 4.2mA	1.9 nC @ 12 V	+20V, -1V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	16-DFN (8x8)	16-PowerVDFN
CGD65A130S2-T13 650V GAN HEMT, 130MOHM, DFN8X8. Cambridge GaN Devices	3,342 In Stock	1 : ¥51.31000 Cut Tape (CT) 3,500 : ¥27.27208 Tape & Reel (TR)	ICeGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	-	GaNFET (Gallium Nitride)	650 V	12A (Tc)	12V	182mOhm @ 900mA, 12V	4.2V @ 4.2mA	2.3 nC @ 12 V	+20V, -1V	Current Sensing	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	16-DFN (8x8)	16-PowerVDFN
CGD65B130SH2 650V GAN HEMT, 130MOHM, DFN5X6. Cambridge GaN Devices	5,000 In Stock	1 : ¥51.39000 Cut Tape (CT) 5,000 : ¥24.86606 Tape & Reel (TR)	ICeGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	GaNFET (Gallium Nitride)	650 V	12A	12V	182mOhm @ 900mA, 12V	4.2V @ 4.2mA	1.9 nC @ 12 V	+20V, -1V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)	8-PowerVDFN
CGD65B130S2-T13 650V GAN HEMT, 130MOHM, DFN5X6. Cambridge GaN Devices	4,875 In Stock	1 : ¥52.71000 Cut Tape (CT) 5,000 : ¥24.62941 Tape & Reel (TR)	ICeGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	-	GaNFET (Gallium Nitride)	650 V	12A (Tc)	9V, 20V	182mOhm @ 900mA, 12V	4.2V @ 4.2mA	2.3 nC @ 12 V	+20V, -1V	Current Sensing	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)	8-PowerVDFN
CGD65A055SH2 650V GAN HEMT, 55MOHM, DFN8X8. W Cambridge GaN Devices	3,489 In Stock	1 : ¥98.27000 Cut Tape (CT) 3,500 : ¥52.23650 Tape & Reel (TR)	ICeGaN™ H2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	GaNFET (Gallium Nitride)	650 V	27A	12V	77mOhm @ 2.2A, 12V	4.2V @ 10mA	4 nC @ 12 V	+20V, -1V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	16-DFN (8x8)	16-PowerVDFN
CGD65A055S2-T07 650V GAN HEMT, 55MOHM, DFN8X8. W Cambridge GaN Devices	704 In Stock	1 : ¥123.64000 Cut Tape (CT) 1,000 : ¥78.30044 Tape & Reel (TR)	ICeGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	-	GaNFET (Gallium Nitride)	650 V	27A (Tc)	12V	77mOhm @ 2.2A, 12V	4.2V @ 10mA	6 nC @ 12 V	+20V, -1V	Current Sensing	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	16-DFN (8x8)	16-PowerVDFN

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Cambridge GaN Devices Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.