9-PowerWDFN Single FETs, MOSFETs

Results: 10
Manufacturer
Infineon Technologiesonsemi
Series
-OptiMOS™ 5OptiMOS™ 6OptiMOS™ 7
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
15 V25 V40 V60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 85A (Tc)15.6A (Ta), 99A (Tc)16A (Ta), 99A (Tc)21A (Ta), 132A (Tc)23A (Ta), 150A (Tc)24A (Ta), 151A (Tc)31A (Ta), 205A (Tc)39A (Ta), 264A (Tc)47A (Ta), 310A (Tc)58A (Ta), 379A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V4.5V, 7V6V, 10V
Rds On (Max) @ Id, Vgs
0.45mOhm @ 30A, 7V0.58mOhm @ 20A, 10V0.85mOhm @ 27A, 10V1.35mOhm @ 20A, 10V2.1mOhm @ 23A, 10V2.2mOhm @ 20A, 10V3mOhm @ 20A, 10V4.6mOhm @ 20A, 10V5mOhm @ 20A, 10V6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 120µA2V @ 250µA2V @ 432µA2V @ 51µA2V @ 934µA2.3V @ 47µA2.3V @ 48µA3.3V @ 50µA3.8V @ 48µA3.8V @ 49µA
Gate Charge (Qg) (Max) @ Vgs
20.3 nC @ 4.5 V38 nC @ 10 V41 nC @ 10 V43 nC @ 10 V44 nC @ 10 V49 nC @ 10 V53 nC @ 10 V55 nC @ 7 V60 nC @ 10 V82 nC @ 10 V
Vgs (Max)
±7V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
2760 pF @ 20 V2900 pF @ 40 V3000 pF @ 50 V3250 pF @ 40 V3800 pF @ 20 V3800 pF @ 30 V4360 pF @ 13 V4420 pF @ 30 V5453 pF @ 12 V6240 pF @ 7.5 V
Power Dissipation (Max)
2W (Ta), 84W (Tc)2W (Ta), 89W (Tc)2.1W (Ta), 89W (Tc)2.5W (Ta), 100W (Tc)2.5W (Ta), 107W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
9-WDFN (3.3x3.3)PG-WHTFN-9PG-WHTFN-9-1
Stocking Options
Environmental Options
Media
Marketplace Product
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
IQE006NE2LM5CGSCATMA1
IQE013N04LM6CGSCATMA1
OPTIMOS LOWVOLTAGE POWER MOSFET
Infineon Technologies
8,492
In Stock
1 : ¥22.41000
Cut Tape (CT)
6,000 : ¥9.72528
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
31A (Ta), 205A (Tc)
4.5V, 10V
1.35mOhm @ 20A, 10V
2V @ 51µA
41 nC @ 10 V
±20V
3800 pF @ 20 V
-
2.5W (Ta), 107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-WHTFN-9-1
9-PowerWDFN
25V PT11E IN 3X3 SD PACKAGE
NTTFSS1D1N02P1E
25V PT11E IN 3X3 SD PACKAGE
onsemi
3,000
In Stock
117,000
Factory
1 : ¥17.65000
Cut Tape (CT)
3,000 : ¥7.94033
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
39A (Ta), 264A (Tc)
4.5V, 10V
0.85mOhm @ 27A, 10V
2V @ 934µA
60 nC @ 10 V
±16V
4360 pF @ 13 V
-
2W (Ta), 89W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
9-WDFN (3.3x3.3)
9-PowerWDFN
10,866
In Stock
1 : ¥20.36000
Cut Tape (CT)
6,000 : ¥8.83479
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
15 V
58A (Ta), 379A (Tc)
4.5V, 7V
0.45mOhm @ 30A, 7V
2V @ 432µA
55 nC @ 7 V
±7V
6240 pF @ 7.5 V
-
2.1W (Ta), 89W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-WHTFN-9
9-PowerWDFN
IQE030N06NM5CGSCATMA1
IQE030N06NM5CGSCATMA1
OPTIMOS LOWVOLTAGE POWER MOSFET
Infineon Technologies
6,000
In Stock
1 : ¥23.07000
Cut Tape (CT)
6,000 : ¥10.77332
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
21A (Ta), 132A (Tc)
6V, 10V
3mOhm @ 20A, 10V
3.3V @ 50µA
49 nC @ 10 V
±20V
3800 pF @ 30 V
-
2.5W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-WHTFN-9-1
9-PowerWDFN
9-PowerWDFN
IQE022N06LM5CGSCATMA1
OPTIMOS 5 POWER-TRANSISTOR 60V
Infineon Technologies
4,840
In Stock
1 : ¥29.23000
Cut Tape (CT)
6,000 : ¥9.75181
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta), 151A (Tc)
4.5V, 10V
2.2mOhm @ 20A, 10V
2.3V @ 48µA
53 nC @ 10 V
±20V
4420 pF @ 30 V
-
2.5W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-WHTFN-9
9-PowerWDFN
9-PowerWDFN
IQE046N08LM5CGSCATMA1
OPTIMOS 5 POWER-TRANSISTOR 60V
Infineon Technologies
91
In Stock
1 : ¥23.56000
Cut Tape (CT)
6,000 : ¥10.23897
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
15.6A (Ta), 99A (Tc)
4.5V, 10V
4.6mOhm @ 20A, 10V
2.3V @ 47µA
38 nC @ 10 V
±20V
3250 pF @ 40 V
-
2.5W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-WHTFN-9
9-PowerWDFN
IQE006NE2LM5CGSCATMA1
IQE006NE2LM5CGSCATMA1
OPTIMOS LOWVOLTAGE POWER MOSFET
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥20.36000
Cut Tape (CT)
6,000 : ¥8.82312
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
47A (Ta), 310A (Tc)
4.5V, 10V
0.58mOhm @ 20A, 10V
2V @ 250µA
82 nC @ 10 V
±16V
5453 pF @ 12 V
-
2.1W (Ta), 89W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-WHTFN-9-1
9-PowerWDFN
IQE065N10NM5CGSCATMA1
IQE065N10NM5CGSCATMA1
OPTIMOS LOWVOLTAGE POWER MOSFET
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥22.91000
Cut Tape (CT)
6,000 : ¥9.95453
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
13A (Ta), 85A (Tc)
6V, 10V
6.5mOhm @ 20A, 10V
3.8V @ 48µA
43 nC @ 10 V
±20V
3000 pF @ 50 V
-
2.5W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-WHTFN-9-1
9-PowerWDFN
IQE050N08NM5CGSCATMA1
IQE050N08NM5CGSCATMA1
OPTIMOS LOWVOLTAGE POWER MOSFET
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥24.22000
Cut Tape (CT)
6,000 : ¥11.31209
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
16A (Ta), 99A (Tc)
6V, 10V
5mOhm @ 20A, 10V
3.8V @ 49µA
44 nC @ 10 V
±20V
2900 pF @ 40 V
-
2.5W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-WHTFN-9-1
9-PowerWDFN
NTTFSS002N04HL
NTTFSS002N04HL
40V T8 IN 3X3 SD PACKAGE
onsemi
0
In Stock
387,000
Factory
Check Lead Time
1 : ¥14.86000
Cut Tape (CT)
3,000 : ¥6.70517
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
23A (Ta), 150A (Tc)
4.5V, 10V
2.1mOhm @ 23A, 10V
2V @ 120µA
20.3 nC @ 4.5 V
±20V
2760 pF @ 20 V
-
2W (Ta), 84W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
9-WDFN (3.3x3.3)
9-PowerWDFN
Showing
of 10

9-PowerWDFN Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.