64A (Tj) Single FETs, MOSFETs

Results: 8
Manufacturer
Infineon TechnologiesQorvo
Series
-CoolMOS™CoolSiC™OptiMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
80 V600 V750 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V12V15V, 20V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 32A, 10V25mOhm @ 24.5A, 20V29mOhm @ 40A, 12V37mOhm @ 27A, 10V
Vgs(th) (Max) @ Id
2V @ 30µA4.7V @ 680µA5.6V @ 8.8mA6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V37.8 nC @ 15 V49 nC @ 18 V79 nC @ 10 V
Vgs (Max)
+20V, -2V±20V+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 400 V1668 pF @ 500 V2106 pF @ 40 V3458 pF @ 400 V
Power Dissipation (Max)
75W (Tc)273W (Tc)278W (Tc)329W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-HDSOP-22PG-HDSOP-22-1PG-TDSON-8-33PG-TO247-3-U06PG-TO247-4-U02PG-TO263-7TOLL
Package / Case
8-PowerSFN8-PowerTDFN22-PowerBSOP ModuleTO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
MOSFET_(75V 120V( PG-TDSON-8
IAUC64N08S5L075ATMA1
MOSFET_(75V 120V( PG-TDSON-8
Infineon Technologies
4,360
In Stock
1 : ¥13.05000
Cut Tape (CT)
5,000 : ¥5.15259
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
64A (Tj)
4.5V, 10V
7.5mOhm @ 32A, 10V
2V @ 30µA
37 nC @ 10 V
±20V
2106 pF @ 40 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8-33
8-PowerTDFN
421
In Stock
1 : ¥64.53000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
64A (Tj)
10V
37mOhm @ 27A, 10V
4.7V @ 680µA
79 nC @ 10 V
±20V
3458 pF @ 400 V
-
329W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-U06
TO-247-3
460
In Stock
1 : ¥71.01000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
64A (Tj)
10V
37mOhm @ 27A, 10V
4.7V @ 680µA
79 nC @ 10 V
±20V
3458 pF @ 400 V
-
329W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4-U02
TO-247-4
500
In Stock
1 : ¥121.75000
Cut Tape (CT)
1,000 : ¥72.87458
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
750 V
64A (Tj)
15V, 20V
25mOhm @ 24.5A, 20V
5.6V @ 8.8mA
49 nC @ 18 V
+23V, -5V
1668 pF @ 500 V
-
273W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
0
In Stock
Check Lead Time
1 : ¥113.95000
Cut Tape (CT)
750 : ¥78.66941
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
750 V
64A (Tj)
15V, 20V
25mOhm @ 24.5A, 20V
5.6V @ 8.8mA
49 nC @ 18 V
+20V, -2V
1668 pF @ 500 V
-
273W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
0
In Stock
Check Lead Time
1 : ¥123.27000
Cut Tape (CT)
750 : ¥85.11339
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
750 V
64A (Tj)
15V, 20V
25mOhm @ 24.5A, 20V
5.6V @ 8.8mA
49 nC @ 18 V
+23V, -5V
1668 pF @ 500 V
-
273W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-HDSOP-22
22-PowerBSOP Module
750V/23MO,SICFET,G4,TOLL
UJ4C075023L8SSR
750V/23MO,SICFET,G4,TOLL
Qorvo
0
In Stock
Check Lead Time
200 : ¥101.41995
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
64A (Tj)
12V
29mOhm @ 40A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1400 pF @ 400 V
-
278W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
750V/23MO,SICFET,G4,TOLL
UJ4C075023L8SSB
750V/23MO,SICFET,G4,TOLL
Qorvo
0
In Stock
Check Lead Time
10 : ¥135.25400
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
64A (Tj)
12V
29mOhm @ 40A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1400 pF @ 400 V
-
278W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
Showing
of 8

64A (Tj) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.