6.7A (Ta) Single FETs, MOSFETs

Results: 15
Manufacturer
Diodes IncorporatedFairchild SemiconductorInfineon TechnologiesonsemiVishay Siliconix
Series
-HEXFET®PowerTrench®TrenchFET®
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V25 V40 V80 V100 V150 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V2.7V, 4.5V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
16.5mOhm @ 10A, 10V24mOhm @ 6.2A, 4.5V25mOhm @ 3A, 10V26mOhm @ 6.7A, 10V27mOhm @ 6.4A, 4.5V28mOhm @ 6.7A, 4.5V40mOhm @ 3.2A, 4.5V420mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)1V @ 250µA1.5V @ 250µA1.8V @ 250µA2V @ 250µA (Min)4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 4.5 V11 nC @ 10 V21 nC @ 4.5 V33.7 nC @ 10 V41 nC @ 10 V48.7 nC @ 8 V50 nC @ 4.5 V77 nC @ 10 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
344 pF @ 75 V667 pF @ 10 V1290 pF @ 6 V1500 pF @ 15 V1643 pF @ 20 V2530 pF @ 15 V2714 pF @ 50 V
Power Dissipation (Max)
800mW (Ta)1.2W (Ta)1.56W (Ta)1.7W (Ta)2.5W (Ta)3W (Ta)42W (Ta)52W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-SO8-SO FLMP8-SOICTO-252 (DPAK)TO-252-3TO-252AATSOT-26U-DFN2020-6 (Type E)
Package / Case
6-PowerUDFN8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width) Exposed PadSOT-23-6 Thin, TSOT-23-6TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
15Results
Applied FiltersRemove All
Showing
of 15
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-252AA
FDD306P
MOSFET P-CH 12V 6.7A TO252
onsemi
8,517
In Stock
5,000
Factory
1 : ¥7.88000
Cut Tape (CT)
2,500 : ¥3.24501
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
6.7A (Ta)
1.8V, 4.5V
28mOhm @ 6.7A, 4.5V
1.5V @ 250µA
21 nC @ 4.5 V
±8V
1290 pF @ 6 V
-
52W (Ta)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-SOIC
SI4896DY-T1-E3
MOSFET N-CH 80V 6.7A 8SO
Vishay Siliconix
5,360
In Stock
1 : ¥15.35000
Cut Tape (CT)
2,500 : ¥6.94008
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
6.7A (Ta)
6V, 10V
16.5mOhm @ 10A, 10V
2V @ 250µA (Min)
41 nC @ 10 V
±20V
-
-
1.56W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI4896DY-T1-GE3
MOSFET N-CH 80V 6.7A 8SO
Vishay Siliconix
5,000
In Stock
1 : ¥15.35000
Cut Tape (CT)
2,500 : ¥6.94008
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
6.7A (Ta)
6V, 10V
16.5mOhm @ 10A, 10V
2V @ 250µA (Min)
41 nC @ 10 V
±20V
-
-
1.56W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TSOT-26
DMN2040UVT-7
MOSFET N-CH 20V 6.7A TSOT26 T&R
Diodes Incorporated
2,990
In Stock
33,000
Factory
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.74167
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
6.7A (Ta)
2.5V, 4.5V
24mOhm @ 6.2A, 4.5V
1.5V @ 250µA
7.5 nC @ 4.5 V
±8V
667 pF @ 10 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
U-DFN2020-6 Type E
DMP2039UFDE-7
MOSFET P-CH 25V 6.7A 6UDFN
Diodes Incorporated
3,000
In Stock
57,000
Factory
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.18435
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
25 V
6.7A (Ta)
1.8V, 4.5V
27mOhm @ 6.4A, 4.5V
1V @ 250µA
48.7 nC @ 8 V
±8V
2530 pF @ 15 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
TO-252-2
DMP4025LK3-13
MOSFET P-CH 40V 6.7A TO252
Diodes Incorporated
5,000
In Stock
27,500
Factory
1 : ¥5.91000
Cut Tape (CT)
2,500 : ¥2.25747
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
6.7A (Ta)
4.5V, 10V
25mOhm @ 3A, 10V
1.8V @ 250µA
33.7 nC @ 10 V
±20V
1643 pF @ 20 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 D-Pak Top
DMP4025LK3Q-13
MOSFET BVDSS: 31V~40V TO252 T&R
Diodes Incorporated
2,387
In Stock
7,500
Factory
1 : ¥7.31000
Cut Tape (CT)
2,500 : ¥2.78828
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
6.7A (Ta)
4.5V, 10V
25mOhm @ 3A, 10V
1.8V @ 250µA
33.7 nC @ 10 V
±20V
1643 pF @ 20 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRG4RC10UTRPBF
FDD2512
MOSFET N-CH 150V 6.7A TO252
Fairchild Semiconductor
9,940
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
150 V
6.7A (Ta)
6V, 10V
420mOhm @ 2.2A, 10V
4V @ 250µA
11 nC @ 10 V
±20V
344 pF @ 75 V
-
42W (Ta)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
INFINFICE2QR4765XKLA1
FDS3170N7
MOSFET N-CH 100V 6.7A 8SO
Fairchild Semiconductor
179
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
6.7A (Ta)
6V, 10V
26mOhm @ 6.7A, 10V
4V @ 250µA
77 nC @ 10 V
±20V
2714 pF @ 50 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TSOT-26
DMN2040UVT-13
MOSFET N-CH 20V 6.7A TSOT26 T&R
Diodes Incorporated
0
In Stock
10,000
Factory
Check Lead Time
10,000 : ¥0.64224
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
20 V
6.7A (Ta)
2.5V, 4.5V
24mOhm @ 6.2A, 4.5V
1.5V @ 250µA
7.5 nC @ 4.5 V
±8V
667 pF @ 10 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
TO-252AA
FDD2512
MOSFET N-CH 150V 6.7A TO252
onsemi
0
In Stock
2,500 : ¥6.06554
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
150 V
6.7A (Ta)
6V, 10V
420mOhm @ 2.2A, 10V
4V @ 250µA
11 nC @ 10 V
±20V
344 pF @ 75 V
-
42W (Ta)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRF7404TRPBF
MOSFET P-CH 20V 6.7A 8SO
Infineon Technologies
0
In Stock
1 : ¥7.72000
Cut Tape (CT)
4,000 : ¥2.93390
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
20 V
6.7A (Ta)
2.7V, 4.5V
40mOhm @ 3.2A, 4.5V
700mV @ 250µA (Min)
50 nC @ 4.5 V
±12V
1500 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7404QTRPBF
MOSFET P-CH 20V 6.7A 8-SOIC
Infineon Technologies
0
In Stock
Obsolete
-
Cut Tape (CT)
Digi-Reel®
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
6.7A (Ta)
-
40mOhm @ 3.2A, 4.5V
700mV @ 250µA (Min)
50 nC @ 4.5 V
-
1500 pF @ 15 V
-
-
-
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7404PBF
MOSFET P-CH 20V 6.7A 8SO
Infineon Technologies
0
In Stock
Discontinued at Digi-Key
Tube
Discontinued at Digi-Key
P-Channel
MOSFET (Metal Oxide)
20 V
6.7A (Ta)
2.7V, 4.5V
40mOhm @ 3.2A, 4.5V
700mV @ 250µA (Min)
50 nC @ 4.5 V
±12V
1500 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
8-SOIC
FDS3170N7
MOSFET N-CH 100V 6.7A 8SO
onsemi
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
6.7A (Ta)
6V, 10V
26mOhm @ 6.7A, 10V
4V @ 250µA
77 nC @ 10 V
±20V
2714 pF @ 50 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO FLMP
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Showing
of 15

6.7A (Ta) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.