4.3A (Tc) Single FETs, MOSFETs

Results: 64
Manufacturer
Goford SemiconductorHarris CorporationInfineon TechnologiesInternational RectifieronsemiSanyoSTMicroelectronicsVishay Siliconix
Series
-CoolMOS™CoolMOS™ CEEHEXFET®OptiMOS™PowerMESH™QFET®SGTTrenchFET®
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyObsolete
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
20 V40 V60 V100 V150 V200 V500 V600 V650 V800 V900 V1000 V1700 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V2.5V, 4.5V4V, 5V4.5V, 10V10V13V20V
Rds On (Max) @ Id, Vgs
27mOhm @ 2.2A, 4.5V51mOhm @ 3.2A, 10V68mOhm @ 2.4A, 10V95mOhm @ 4.5A, 10V400mOhm @ 4.3A, 10V540mOhm @ 2.6A, 10V540mOhm @ 2.6A, 5V540mOhm @ 900mA, 10V670mOhm @ 1A, 10V700mOhm @ 2A, 10V800mOhm @ 2.15A, 10V800mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id
1.1V @ 250µA1.5V @ 250µA2V @ 250µA2.5V @ 250µA3V @ 250µA3.5V @ 100µA3.5V @ 130µA3.5V @ 200µA4V @ 166µA4V @ 1mA4V @ 250µA4.3V @ 640µA4.5V @ 100µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 5 V6.7 nC @ 10 V7 nC @ 10 V8.3 nC @ 10 V10 nC @ 4.5 V10 nC @ 10 V10.5 nC @ 10 V12 nC @ 10 V13 nC @ 10 V14 nC @ 20 V15.3 nC @ 10 V29 nC @ 10 V32 nC @ 10 V36 nC @ 10 V
Vgs (Max)
±10V±12V±20V+25V, -15V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 1000 V180 pF @ 25 V230 pF @ 25 V231 pF @ 100 V247 pF @ 50 V250 pF @ 25 V260 pF @ 30 V280 pF @ 100 V300 pF @ 10 V328 pF @ 100 V347 pF @ 100 V370 pF @ 20 V550 pF @ 30 V622 pF @ 100 V
Power Dissipation (Max)
960mW (Ta), 1.7W (Tc)1W (Tc)2W (Ta), 36W (Tc)2.5W (Ta), 25W (Tc)2.5W (Ta), 30W (Tc)3W (Tc)19W (Tc)25W (Tc)25.7W (Tc)29W (Tc)30W (Tc)34W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)150°C
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAK-7DPAKIPAK (TO-251)PG-TO220-3-31PG-TO251-3PG-TO252-3PG-TO252-3-11PG-TO252-3-313PG-TO252-3-344SOT-23-3SOT-23-3 (TO-236)TO-204AA (TO-3)
Package / Case
TO-204AA, TO-3TO-220-3TO-220-3 Full PackTO-220-3 Full Pack, Isolated TabTO-236-3, SC-59, SOT-23-3TO-247-3TO-251-3 Long Leads, IPak, TO-251ABTO-251-3 Short Leads, IPAK, TO-251AATO-251-3 Stub Leads, IPAKTO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2356DS-T1-GE3
MOSFET N-CH 40V 4.3A TO236
Vishay Siliconix
27,087
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.85907
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
4.3A (Tc)
2.5V, 10V
51mOhm @ 3.2A, 10V
1.5V @ 250µA
13 nC @ 10 V
±12V
370 pF @ 20 V
-
960mW (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
3,935
In Stock
1 : ¥5.01000
Cut Tape (CT)
2,500 : ¥1.89174
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
500 V
4.3A (Tc)
13V
950mOhm @ 1.2A, 13V
3.5V @ 100µA
10.5 nC @ 10 V
±20V
231 pF @ 100 V
-
53W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3-344
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRLR110TRPBF
MOSFET N-CH 100V 4.3A DPAK
Vishay Siliconix
17,506
In Stock
1 : ¥7.39000
Cut Tape (CT)
2,000 : ¥3.05146
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
4V, 5V
540mOhm @ 2.6A, 5V
2V @ 250µA
6.1 nC @ 5 V
±10V
250 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFR110TRPBF
MOSFET N-CH 100V 4.3A DPAK
Vishay Siliconix
2,675
In Stock
1 : ¥7.88000
Cut Tape (CT)
2,000 : ¥3.26085
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
10V
540mOhm @ 2.6A, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220-3
STP5NK80Z
MOSFET N-CH 800V 4.3A TO220AB
STMicroelectronics
1,196
In Stock
1 : ¥18.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
4.3A (Tc)
10V
2.4Ohm @ 2.15A, 10V
4.5V @ 100µA
45.5 nC @ 10 V
±30V
910 pF @ 25 V
-
110W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
D2PAK-7
NTBG1000N170M1
SILICON CARBIDE (SIC) MOSFET EL
onsemi
485
In Stock
5,600
Factory
1 : ¥31.28000
Cut Tape (CT)
800 : ¥18.90154
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1700 V
4.3A (Tc)
20V
1.43Ohm @ 2A, 20V
4.3V @ 640µA
14 nC @ 20 V
+25V, -15V
150 pF @ 1000 V
-
51W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3 AC EP
IRFPG40PBF
MOSFET N-CH 1000V 4.3A TO247-3
Vishay Siliconix
179
In Stock
1 : ¥45.07000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
4.3A (Tc)
10V
3.5Ohm @ 2.6A, 10V
4V @ 250µA
120 nC @ 10 V
±20V
1600 pF @ 25 V
-
150W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
TO-252
IRFR110TRPBF-BE3
MOSFET N-CH 100V 4.3A DPAK
Vishay Siliconix
1,850
In Stock
1 : ¥5.58000
Cut Tape (CT)
2,000 : ¥2.95656
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
10V
540mOhm @ 2.6A, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-251AA
IRFU110PBF
MOSFET N-CH 100V 4.3A TO251AA
Vishay Siliconix
2,296
In Stock
1 : ¥6.49000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
10V
540mOhm @ 900mA, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-251AA
TO-251-3 Short Leads, IPAK, TO-251AA
D-PAK (TO-252AA)
IRFR110PBF
MOSFET N-CH 100V 4.3A DPAK
Vishay Siliconix
3,296
In Stock
1 : ¥7.88000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
10V
540mOhm @ 2.6A, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-251AA
IRLU110PBF
MOSFET N-CH 100V 4.3A TO251AA
Vishay Siliconix
6,595
In Stock
1 : ¥8.29000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
4V, 5V
540mOhm @ 2.6A, 5V
2V @ 250µA
6.1 nC @ 5 V
±10V
250 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-251AA
TO-251-3 Short Leads, IPAK, TO-251AA
TO-252
SIHD4N80E-GE3
MOSFET N-CH 800V 4.3A DPAK
Vishay Siliconix
1,980
In Stock
1 : ¥9.77000
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
800 V
4.3A (Tc)
10V
1.27Ohm @ 2A, 10V
4V @ 250µA
32 nC @ 10 V
±30V
622 pF @ 100 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRLR110PBF
MOSFET N-CH 100V 4.3A DPAK
Vishay Siliconix
335
In Stock
1 : ¥10.18000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
4V, 5V
540mOhm @ 2.6A, 5V
2V @ 250µA
6.1 nC @ 5 V
±10V
250 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220FP
STP5NK80ZFP
MOSFET N-CH 800V 4.3A TO220FP
STMicroelectronics
926
In Stock
1 : ¥20.61000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
4.3A (Tc)
10V
2.4Ohm @ 2.15A, 10V
4.5V @ 100µA
45.5 nC @ 10 V
±30V
910 pF @ 25 V
-
30W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220FP
TO-220-3 Full Pack
TO-252
IRFR110PBF-BE3
MOSFET N-CH 100V 4.3A DPAK
Vishay Siliconix
2,961
In Stock
1 : ¥5.58000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
-
540mOhm @ 2.6A, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
IRFR110TRLPBF-BE3
MOSFET N-CH 100V 4.3A DPAK
Vishay Siliconix
2,995
In Stock
1 : ¥10.92000
Cut Tape (CT)
3,000 : ¥4.52738
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
-
540mOhm @ 2.6A, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB Full Pack
IRFI9630GPBF
MOSFET P-CH 200V 4.3A TO220-3
Vishay Siliconix
2,025
In Stock
1 : ¥15.27000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
4.3A (Tc)
10V
800mOhm @ 2.6A, 10V
4V @ 250µA
29 nC @ 10 V
±20V
700 pF @ 25 V
-
35W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO252-3
IPD40DP06NMATMA1
MOSFET P-CH 60V 4.3A TO252-3
Infineon Technologies
2,301
In Stock
1 : ¥5.42000
Cut Tape (CT)
2,500 : ¥1.77535
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
4.3A (Tc)
10V
400mOhm @ 4.3A, 10V
4V @ 166µA
6.7 nC @ 10 V
±20V
260 pF @ 30 V
-
19W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
IRFR110TRLPBF
MOSFET N-CH 100V 4.3A DPAK
Vishay Siliconix
2,990
In Stock
1 : ¥10.92000
Cut Tape (CT)
3,000 : ¥4.10490
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
10V
540mOhm @ 2.6A, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPAK (TO-251)
SIHU4N80AE-GE3
MOSFET N-CH 800V 4.3A IPAK
Vishay Siliconix
2,995
In Stock
1 : ¥12.73000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
4.3A (Tc)
10V
1.27Ohm @ 2A, 10V
4V @ 250µA
32 nC @ 10 V
±30V
622 pF @ 100 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
IPAK (TO-251)
TO-251-3 Long Leads, IPak, TO-251AB
D2PAK-7
NVBG1000N170M1
SIC 1700V MOS 1O IN TO263-7L
onsemi
1,569
In Stock
6,400
Factory
1 : ¥49.67000
Cut Tape (CT)
800 : ¥32.36500
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1700 V
4.3A (Tc)
20V
1.43Ohm @ 2A, 20V
4.3V @ 640µA
14 nC @ 20 V
+25V, -15V
150 pF @ 1000 V
-
51W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO251-3
IPU50R950CEAKMA1
MOSFET N-CH 500V 4.3A TO251-3
Infineon Technologies
0
In Stock
163,349
Marketplace
Obsolete
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
4.3A (Tc)
13V
950mOhm @ 1.2A, 13V
3.5V @ 100µA
10.5 nC @ 10 V
±20V
231 pF @ 100 V
-
53W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPAK, TO-251AA
PG-TO251-3
IPU50R950CEBKMA1
MOSFET N-CH 500V 4.3A TO251-3
Infineon Technologies
0
In Stock
5,380
Marketplace
Discontinued at Digi-Key
Bulk
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
500 V
4.3A (Tc)
13V
950mOhm @ 1.2A, 13V
3.5V @ 100µA
10.5 nC @ 10 V
±20V
231 pF @ 100 V
-
34W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPAK, TO-251AA
TO-251-3 Stub
IPS65R1K0CEAKMA1
MOSFET N-CH 650V 4.3A TO251
Infineon Technologies
0
In Stock
1,898
Marketplace
Discontinued at Digi-Key
Tube
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
650 V
4.3A (Tc)
10V
1Ohm @ 1.5A, 10V
3.5V @ 200µA
15.3 nC @ 10 V
±20V
328 pF @ 100 V
-
37W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
TO-251
TO-251-3 Stub Leads, IPAK
IRFU110
IRFU110
4.7A 100V 0.540 OHM N-CHANNEL
Harris Corporation
2,825
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
10V
540mOhm @ 900mA, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-251AA
TO-251-3 Short Leads, IPAK, TO-251AA
Showing
of 64

4.3A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.