SIHU4N80AE-GE3

DigiKey Part Number
742-SIHU4N80AE-GE3-ND
Manufacturer
Manufacturer Product Number
SIHU4N80AE-GE3
Description
MOSFET N-CH 800V 4.3A IPAK
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
622 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251)
Package / Case
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥12.73000¥12.73
10¥10.43500¥104.35
100¥8.11460¥811.46
500¥6.87802¥3,439.01
1,000¥5.60286¥5,602.86
3,000¥5.27439¥15,823.17
6,000¥5.02324¥30,139.44
12,000¥4.79139¥57,496.68
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.