SIHU4N80AE-GE3 | |
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DigiKey Part Number | 742-SIHU4N80AE-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHU4N80AE-GE3 |
Description | MOSFET N-CH 800V 4.3A IPAK |
Manufacturer Standard Lead Time | 15 Weeks |
Customer Reference | |
Detailed Description | N-Channel 800 V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251) |
Datasheet | Datasheet |
Type | Description | Select All |
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Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 800 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 1.27Ohm @ 2A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 622 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 69W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | IPAK (TO-251) | |
Package / Case | ||
Base Product Number |
Quantity | Unit Price (Including 13% VAT) | Ext Price (Including 13% VAT) |
---|---|---|
1 | ¥12.73000 | ¥12.73 |
10 | ¥10.43500 | ¥104.35 |
100 | ¥8.11460 | ¥811.46 |
500 | ¥6.87802 | ¥3,439.01 |
1,000 | ¥5.60286 | ¥5,602.86 |
3,000 | ¥5.27439 | ¥15,823.17 |
6,000 | ¥5.02324 | ¥30,139.44 |
12,000 | ¥4.79139 | ¥57,496.68 |