4.2A Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SI3401-TP P-CHANNEL MOSFET,SOT-23 Micro Commercial Co	1,412 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.52306 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.2A	2.5V, 10V	65mOhm @ 4.2A, 10V	1.3V @ 250µA	-	±12V	954 pF @ 15 V	-	1.3W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SI2305BHE3-TP P-CHANNEL MOSFET,SOT-23 Micro Commercial Co	2,725 In Stock	1 : ¥3.53000 Cut Tape (CT) 3,000 : ¥0.55297 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A	1.8V, 4.5V	60mOhm @ 2.7A, 4.5V	900mV @ 250µA	10.98 nC @ 4.5 V	±10V	1010 pF @ 10 V	-	1.4W	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
MMFTP2319 MOSFET SOT23 -40V -4.2A 0.08OHM Diotec Semiconductor	2,900 In Stock	1 : ¥3.86000 Cut Tape (CT) 3,000 : ¥0.85193 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	-	-	4.2A	-	-	-	-	-	-	-	750mW	-	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SSF3341 MOSFET, P-CH, SINGLE, -4.2A, -30 Good-Ark Semiconductor	5,780 In Stock	1 : ¥2.46000 Cut Tape (CT) 3,000 : ¥0.55305 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.2A	2.5V, 10V	50mOhm @ 4.2A, 10V	1.3V @ 250µA	18 nC @ 10 V	±12V	712 pF @ 15 V	-	1.4W	-55°C ~ 150°C	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SI3401A-13P MOSFET Micro Commercial Co	0 In Stock Check Lead Time	10,000 : ¥0.52270 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.2A	2.5V, 10V	60mOhm @ 4.2A, 10V	1.3V @ 250µA	-	±12V	1050 pF @ 15 V	-	1.3W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.