32A (Ta), 100A (Tc) Single FETs, MOSFETs

Results: 7
Manufacturer
Infineon TechnologiesTexas Instruments
Series
-HEXFET®NexFET™OptiMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time BuyObsolete
Drain to Source Voltage (Vdss)
30 V40 V
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.4mOhm @ 50A, 10V1.6mOhm @ 30A, 10V2mOhm @ 30A, 8V2.1mOhm @ 50A, 10V2.4mOhm @ 25A, 8V
Vgs(th) (Max) @ Id
1.6V @ 250µA2V @ 250µA2.2V @ 250µA2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 4.5 V31 nC @ 4.5 V61 nC @ 10 V76 nC @ 10 V131 nC @ 10 V
Vgs (Max)
+10V, -8V±20V
Input Capacitance (Ciss) (Max) @ Vds
3420 pF @ 15 V4280 pF @ 15 V4300 pF @ 20 V4400 pF @ 15 V10000 pF @ 15 V
Power Dissipation (Max)
2.5W (Ta), 125W (Tc)2.5W (Ta), 96W (Tc)3.2W (Ta)3.6W (Ta), 100W (Tc)
Supplier Device Package
8-VSON-CLIP (5x6)PG-TDSON-8-1PQFN (5x6) Single DieSuperSO8
Package / Case
8-PowerTDFN8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC014N04LSATMA1
MOSFET N-CH 40V 32/100A SUPERSO8
Infineon Technologies
14,869
In Stock
1 : ¥13.71000
Cut Tape (CT)
5,000 : ¥5.96061
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
32A (Ta), 100A (Tc)
4.5V, 10V
1.4mOhm @ 50A, 10V
2V @ 250µA
61 nC @ 10 V
±20V
4300 pF @ 20 V
-
2.5W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SuperSO8
8-PowerTDFN
8-Power TDFN
CSD17303Q5
MOSFET N-CH 30V 32A/100A 8VSON
Texas Instruments
5,069
In Stock
1 : ¥13.79000
Cut Tape (CT)
2,500 : ¥6.21991
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta), 100A (Tc)
3V, 8V
2.4mOhm @ 25A, 8V
1.6V @ 250µA
23 nC @ 4.5 V
+10V, -8V
3420 pF @ 15 V
-
3.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
8-Power TDFN
CSD17311Q5
MOSFET N-CH 30V 32A/100A 8VSON
Texas Instruments
2,656
In Stock
7,687
Marketplace
1 : ¥15.76000
Cut Tape (CT)
2,500 : ¥7.09876
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta), 100A (Tc)
3V, 8V
2mOhm @ 30A, 8V
1.6V @ 250µA
31 nC @ 4.5 V
+10V, -8V
4280 pF @ 15 V
-
3.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
IRFH3707TR2PBF
IRFH5302TRPBF
MOSFET N-CH 30V 32A/100A PQFN
Infineon Technologies
3,635
In Stock
1 : ¥9.69000
Cut Tape (CT)
4,000 : ¥3.64515
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta), 100A (Tc)
4.5V, 10V
2.1mOhm @ 50A, 10V
2.35V @ 100µA
76 nC @ 10 V
±20V
4400 pF @ 15 V
-
3.6W (Ta), 100W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6) Single Die
8-PowerVDFN
TEXTISCSD86336Q3DT
CSD17303Q5
CSD17303Q5 30V, N CHANNEL NEXFET
Texas Instruments
1,490
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta), 100A (Tc)
3V, 8V
2.4mOhm @ 25A, 8V
1.6V @ 250µA
23 nC @ 4.5 V
+10V, -8V
3420 pF @ 15 V
-
3.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
IRFH3707TR2PBF
IRFH5302TR2PBF
MOSFET N-CH 30V 32A 5X6 PQFN
Infineon Technologies
0
In Stock
1 : ¥11.17000
Cut Tape (CT)
-
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta), 100A (Tc)
-
2.1mOhm @ 50A, 10V
2.35V @ 100µA
76 nC @ 10 V
-
4400 pF @ 15 V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6) Single Die
8-PowerVDFN
PG-TDSON-8-1
BSC016N03LSGATMA1
MOSFET N-CH 30V 32A/100A TDSON
Infineon Technologies
0
In Stock
1 : ¥20.28000
Cut Tape (CT)
5,000 : ¥5.91285
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta), 100A (Tc)
4.5V, 10V
1.6mOhm @ 30A, 10V
2.2V @ 250µA
131 nC @ 10 V
±20V
10000 pF @ 15 V
-
2.5W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
Showing
of 7

32A (Ta), 100A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.