31A (Ta), 205A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IQE013N04LM6CGSCATMA1 OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies	8,492 In Stock	1 : ¥22.41000 Cut Tape (CT) 6,000 : ¥9.72528 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	31A (Ta), 205A (Tc)	4.5V, 10V	1.35mOhm @ 20A, 10V	2V @ 51µA	41 nC @ 10 V	±20V	3800 pF @ 20 V	-	2.5W (Ta), 107W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-WHTFN-9-1	9-PowerWDFN
IQE013N04LM6ATMA1 MOSFET N-CH 40V 31A/205A 8TSON Infineon Technologies	12,123 In Stock	1 : ¥14.29000 Cut Tape (CT) 5,000 : ¥8.54332 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	31A (Ta), 205A (Tc)	-	1.35mOhm @ 20A, 10V	2V @ 51µA	55 nC @ 10 V	±20V	3900 pF @ 20 V	-	2.5W (Ta), 107W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-4	8-PowerTDFN
IQE013N04LM6CGATMA1 40V N-CH FET SOURCE-DOWN CG 3X3 Infineon Technologies	0 In Stock Check Lead Time	1 : ¥20.36000 Cut Tape (CT) 5,000 : ¥8.84222 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	31A (Ta), 205A (Tc)	4.5V, 10V	1.35mOhm @ 20A, 10V	2V @ 51µA	55 nC @ 10 V	±20V	3900 pF @ 20 V	-	2.5W (Ta), 107W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PG-TTFN-9-1	8-PowerTDFN
IQE013N04LM6SCATMA1 OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies	0 In Stock Check Lead Time	1 : ¥22.41000 Cut Tape (CT) 6,000 : ¥9.72528 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	31A (Ta), 205A (Tc)	4.5V, 10V	1.35mOhm @ 20A, 10V	2V @ 51µA	41 nC @ 10 V	±20V	3800 pF @ 20 V	-	2.5W (Ta), 107W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-WHSON-8-1	8-PowerWDFN

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31A (Ta), 205A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.