29A (Tc) Single FETs, MOSFETs

Results: 114
Manufacturer
Alpha & Omega Semiconductor Inc.Central Semiconductor CorpFairchild SemiconductorInfineon TechnologiesInternational RectifierIXYSLittelfuse Inc.Microchip TechnologyNexperia USA Inc.NXP USA Inc.onsemiPanjit International Inc.Rohm SemiconductorSanken Electric USA Inc.
Series
-aMOS™CoolMOS™CoolMOS™ C7CoolMOS™ G7CoolSiC™ Gen 2EEFFDmesh™ IIHEXFET®HiPerFET™HiPerFET™, Polar
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyNot For New DesignsObsolete
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
30 V40 V55 V60 V100 V150 V500 V600 V650 V750 V800 V1000 V1200 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V6V7.5V, 10V10V10V, 15V15V15V, 18V18V20V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 14A, 10V4.6mOhm @ 19.8A, 10V5mOhm @ 15A, 10V8.4mOhm @ 25A, 10V11.5mOhm @ 18.8A, 10V24.7mOhm @ 15A, 10V34mOhm @ 5A, 10V34.5mOhm @ 10A, 10V35mOhm @ 29A, 10V40mOhm @ 13A, 10V40mOhm @ 16A, 10V51mOhm @ 23A, 15V
Vgs(th) (Max) @ Id
2V @ 250µA2V @ 28µA2.1V @ 1mA2.5V @ 250µA2.5V @ 30.7mA3V @ 250µA3.5V @ 250µA3.5V @ 6mA3.9V @ 250µA4V @ 1mA4V @ 250µA4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 6 V8.4 nC @ 10 V9 nC @ 10 V13 nC @ 5 V13 nC @ 10 V14.5 nC @ 10 V16.3 nC @ 10 V17 nC @ 7.5 V18 nC @ 10 V20.6 nC @ 18 V24.7 nC @ 5 V26.6 nC @ 10 V
Vgs (Max)
+7V, -6V±10V±12V+15V, -5V±16V±20V+22V, -4V+22V, -6V+23V, -10V+25V, -15V±25V±30V30V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 400 V513 pF @ 25 V571 pF @ 500 V600 pF @ 400 V638 pF @ 400 V686 pF @ 30 V700 pF @ 25 V700 pF @ 800 V710 pF @ 25 V740 pF @ 75 V800 pF @ 30 V870 pF @ 25 V
Power Dissipation (Max)
3W (Ta), 6.6W (Tc)3.5W (Ta), 7.8W (Tc)3.8W (Ta), 68W (Tc)7.1W (Tc)32W (Tc)33W (Tc)37W (Tc)37.9W (Tc)40W (Tc)56W (Tc)68W (Tc)69.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
3-PQFN (8x8)8-PQFN (8x8)8-SOICD2PAKD3PAKDFN8080-8DPAKHU3PAKISOPLUS247™ISOPLUS264™ISOPLUSi5-Pak™ISOTOP®
Package / Case
3-PowerTDFN4-PowerTSFN8-PowerBSFN8-PowerSFN8-PowerTDFN8-SOIC (0.154", 3.90mm Width)8-VDFN Exposed Pad10-PowerSOP Module16-PowerSOP Module22-PowerBSOP ModuleISOPLUSi5-PAK™PowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
LFPAK33
BUK9M34-100EX
MOSFET N-CH 100V 29A LFPAK33
Nexperia USA Inc.
4,500
In Stock
1 : ¥7.14000
Cut Tape (CT)
1,500 : ¥3.14983
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
29A (Tc)
5V
34mOhm @ 5A, 10V
2.1V @ 1mA
24.7 nC @ 5 V
±10V
2844 pF @ 25 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
8-SOIC
SI4459ADY-T1-GE3
MOSFET P-CH 30V 29A 8SO
Vishay Siliconix
85,662
In Stock
1 : ¥12.64000
Cut Tape (CT)
2,500 : ¥5.69278
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
29A (Tc)
4.5V, 10V
5mOhm @ 15A, 10V
2.5V @ 250µA
195 nC @ 10 V
±20V
6000 pF @ 15 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TP65H150G4PS
TP65H070G4PS
GANFET N-CH 650V 29A TO220
Transphorm
965
In Stock
1 : ¥71.01000
Tube
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
29A (Tc)
10V
85mOhm @ 18A, 10V
4.7V @ 700µA
9 nC @ 10 V
±20V
638 pF @ 400 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
LFPAK56/POWER-SO8/SOT669
PSMN030-60YS,115
MOSFET N-CH 60V 29A LFPAK56
Nexperia USA Inc.
4,635
In Stock
1 : ¥5.42000
Cut Tape (CT)
1,500 : ¥2.29486
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
29A (Tc)
10V
24.7mOhm @ 15A, 10V
4V @ 1mA
13 nC @ 10 V
±20V
686 pF @ 30 V
-
56W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
TO252-3
IPD350N06LGBTMA1
MOSFET N-CH 60V 29A TO252-3
Infineon Technologies
4,256
In Stock
1 : ¥7.22000
Cut Tape (CT)
2,500 : ¥2.98919
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
29A (Tc)
4.5V, 10V
35mOhm @ 29A, 10V
2V @ 28µA
13 nC @ 5 V
±20V
800 pF @ 30 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB PKG
IRFZ34NPBF
MOSFET N-CH 55V 29A TO220AB
Infineon Technologies
2,621
In Stock
1 : ¥7.55000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
29A (Tc)
10V
40mOhm @ 16A, 10V
4V @ 250µA
34 nC @ 10 V
±20V
700 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
PowerPAK SO-8 Pkg
SIR632DP-T1-RE3
MOSFET N-CH 150V 29A PPAK SO-8
Vishay Siliconix
599
In Stock
1 : ¥11.00000
Cut Tape (CT)
3,000 : ¥4.53871
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
29A (Tc)
7.5V, 10V
34.5mOhm @ 10A, 10V
4V @ 250µA
17 nC @ 7.5 V
±20V
740 pF @ 75 V
-
69.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ34NSTRLPBF
MOSFET N-CH 55V 29A D2PAK
Infineon Technologies
4,669
In Stock
1 : ¥12.48000
Cut Tape (CT)
800 : ¥6.72004
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
29A (Tc)
10V
40mOhm @ 16A, 10V
4V @ 250µA
34 nC @ 10 V
±20V
700 pF @ 25 V
-
3.8W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
SIHB30N60E-GE3
MOSFET N-CH 600V 29A D2PAK
Vishay Siliconix
1,084
In Stock
1 : ¥47.86000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
125mOhm @ 15A, 10V
4V @ 250µA
130 nC @ 10 V
±30V
2600 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
797
In Stock
1 : ¥67.07000
Cut Tape (CT)
1,000 : ¥38.03520
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
29A (Tc)
15V, 18V
78.1mOhm @ 8.9A, 18V
5.1V @ 2.8mA
20.6 nC @ 18 V
+23V, -10V
700 pF @ 800 V
-
158W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GAN080-650EBEZ
GAN080-650EBEZ
650 V, 80 MOHM GALLIUM NITRIDE (
Nexperia USA Inc.
1,964
In Stock
1 : ¥70.19000
Cut Tape (CT)
2,500 : ¥26.88711
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
29A (Tc)
6V
80mOhm @ 8A, 6V
2.5V @ 30.7mA
6.2 nC @ 6 V
+7V, -6V
225 pF @ 400 V
-
240W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount, Wettable Flank
DFN8080-8
8-VDFN Exposed Pad
TP65H070G4LSG-TR
TP65H070G4LSG-TR
GANFET N-CH 650V 29A QFN8X8
Transphorm
2,639
In Stock
1 : ¥78.98000
Cut Tape (CT)
3,000 : ¥41.95703
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
29A (Tc)
10V
85mOhm @ 16A, 10V
4.8V @ 700µA
8.4 nC @ 10 V
±20V
600 pF @ 400 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
3-PQFN (8x8)
3-PowerTDFN
TO-220-3
STP34NM60N
MOSFET N-CH 600V 29A TO220-3
STMicroelectronics
289
In Stock
1 : ¥79.22000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
105mOhm @ 14.5A, 10V
4V @ 250µA
80 nC @ 10 V
±25V
2722 pF @ 100 V
-
250W (Tc)
150°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
TO-247-3 HiP
STW34NM60N
MOSFET N-CH 600V 29A TO247-3
STMicroelectronics
536
In Stock
1 : ¥83.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
105mOhm @ 14.5A, 10V
4V @ 250µA
80 nC @ 10 V
±25V
2722 pF @ 100 V
-
250W (Tc)
150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
D2Pak
STB34NM60ND
MOSFET N-CH 600V 29A D2PAK
STMicroelectronics
1,000
In Stock
1 : ¥89.65000
Cut Tape (CT)
1,000 : ¥50.87476
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
110mOhm @ 14.5A, 10V
5V @ 250µA
80.4 nC @ 10 V
±25V
2785 pF @ 50 V
-
190W (Tc)
150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
8-SOIC
SQ4184EY-T1_GE3
MOSFET N-CH 40V 29A 8SOIC
Vishay Siliconix
4,585
In Stock
1 : ¥12.97000
Cut Tape (CT)
2,500 : ¥5.37854
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
29A (Tc)
4.5V, 10V
4.6mOhm @ 14A, 10V
2.5V @ 250µA
110 nC @ 10 V
±20V
5400 pF @ 20 V
-
7.1W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-247-3 AC EP
SIHG105N60EF-GE3
MOSFET N-CH 600V 29A TO247AC
Vishay Siliconix
447
In Stock
1 : ¥23.97000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
102mOhm @ 13A, 10V
5V @ 250µA
53 nC @ 10 V
±30V
1804 pF @ 100 V
-
208W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
TO-247-3 AC EP
SIHG30N60E-GE3
MOSFET N-CH 600V 29A TO247AC
Vishay Siliconix
464
In Stock
1 : ¥35.55000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
125mOhm @ 15A, 10V
4V @ 250µA
130 nC @ 10 V
±30V
2600 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
PG-HSOF-8-2
IPT60R080G7XTMA1
MOSFET N-CH 600V 29A 8HSOF
Infineon Technologies
5,618
In Stock
1 : ¥36.62000
Cut Tape (CT)
2,000 : ¥24.33592
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
80mOhm @ 9.7A, 10V
4V @ 490µA
42 nC @ 10 V
±20V
1640 pF @ 400 V
-
167W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
P/PG-HDSOP-10-1
IPDD60R080G7XTMA1
MOSFET N-CH 600V 29A HDSOP-10
Infineon Technologies
2,896
In Stock
1 : ¥53.04000
Cut Tape (CT)
1,700 : ¥27.41939
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
80mOhm @ 9.7A, 10V
4V @ 490µA
42 nC @ 10 V
±20V
1640 pF @ 400 V
-
174W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
5,100
In Stock
1 : ¥55.50000
Cut Tape (CT)
3,000 : ¥29.49055
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
65mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2850 pF @ 400 V
-
180W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4-1
4-PowerTSFN
TO-247-3 HiP
STW34NM60ND
MOSFET N-CH 600V 29A TO247
STMicroelectronics
588
In Stock
1 : ¥87.02000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
110mOhm @ 14.5A, 10V
5V @ 250µA
80.4 nC @ 10 V
±25V
2785 pF @ 50 V
-
190W (Tc)
150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
2,000
In Stock
1 : ¥37.93000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
29A (Tc)
10V
130mOhm @ 10.8A, 10V
4V @ 250µA
51 nC @ 10 V
±30V
1920 pF @ 400 V
-
235W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB-L
TO-220-3
1,976
In Stock
1 : ¥38.34000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
29A (Tc)
10V
130mOhm @ 10.8A, 10V
4V @ 250µA
51 nC @ 10 V
±30V
1920 pF @ 400 V
-
33W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ITO-220AB-F
TO-220-3 Full Pack, Isolated Tab
IPL65R095CFD7AUMA1
IPL65R095CFD7AUMA1
COOLMOS CFD7 SUPERJUNCTION MOSFE
Infineon Technologies
3,000
In Stock
1 : ¥43.76000
Cut Tape (CT)
3,000 : ¥21.29577
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
29A (Tc)
10V
95mOhm @ 12.5A, 10V
4.5V @ 630µA
53 nC @ 10 V
±20V
2513 pF @ 400 V
-
171W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
Showing
of 114

29A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.