29A (Ta), 100A (Tc) Single FETs, MOSFETs

Results: 9
Manufacturer
Infineon TechnologiesTexas Instruments
Series
-HEXFET®NexFET™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
25 V30 V40 V
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 30A, 10V1.9mOhm @ 30A, 10V2.4mOhm @ 25A, 8V2.4mOhm @ 50A, 10V2.5mOhm @ 50A, 10V3.4mOhm @ 30A, 8V
Vgs(th) (Max) @ Id
1.4V @ 250µA1.6V @ 250µA2V @ 250µA2.35V @ 100µA2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
18.3 nC @ 4.5 V19 nC @ 4.5 V33 nC @ 10 V36 nC @ 10 V39 nC @ 10 V55 nC @ 10 V82 nC @ 10 V
Vgs (Max)
+10V, -8V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 15 V2500 pF @ 12 V2600 pF @ 15 V2800 pF @ 12 V3100 pF @ 12.5 V3635 pF @ 25 V4730 pF @ 25 V
FET Feature
-Schottky Diode (Body)
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)2.5W (Ta), 69W (Tc)3.1W (Ta)3.1W (Ta), 113W (Tc)3.6W (Ta), 104W (Tc)3.6W (Ta), 156W (Tc)
Supplier Device Package
8-PQFN (5x6)8-VSON-CLIP (5x6)8-VSONP (5x6)PG-TDSON-8-1PG-TDSON-8-6PQFN (5x6) Single Die
Package / Case
8-PowerTDFN8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC0501NSIATMA1
MOSFET N-CH 30V 29A/100A TDSON
Infineon Technologies
11,778
In Stock
1 : ¥8.95000
Cut Tape (CT)
5,000 : ¥4.75348
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
29A (Ta), 100A (Tc)
4.5V, 10V
1.9mOhm @ 30A, 10V
2V @ 250µA
33 nC @ 10 V
±20V
2200 pF @ 15 V
Schottky Diode (Body)
2.5W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
PG-TDSON-8-1
BSC018NE2LSATMA1
MOSFET N-CH 25V 29A/100A TDSON
Infineon Technologies
9,347
In Stock
1 : ¥7.06000
Cut Tape (CT)
5,000 : ¥3.75599
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
29A (Ta), 100A (Tc)
4.5V, 10V
1.8mOhm @ 30A, 10V
2V @ 250µA
39 nC @ 10 V
±20V
2800 pF @ 12 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
8-Power TDFN
BSC018NE2LSIATMA1
MOSFET N-CH 25V 29A/100A TDSON
Infineon Technologies
9,250
In Stock
1 : ¥11.99000
Cut Tape (CT)
5,000 : ¥4.48666
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
29A (Ta), 100A (Tc)
4.5V, 10V
1.8mOhm @ 30A, 10V
2V @ 250µA
36 nC @ 10 V
±20V
2500 pF @ 12 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
8-Power TDFN
CSD16321Q5T
25-V, N CHANNEL NEXFET POWER MOS
Texas Instruments
530
In Stock
1 : ¥17.08000
Cut Tape (CT)
250 : ¥11.55876
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
29A (Ta), 100A (Tc)
3V, 8V
2.4mOhm @ 25A, 8V
1.4V @ 250µA
19 nC @ 4.5 V
+10V, -8V
3100 pF @ 12.5 V
-
3.1W (Ta), 113W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
8-Power TDFN
CSD17305Q5A
MOSFET N-CH 30V 29A/100A 8VSON
Texas Instruments
0
In Stock
Check Lead Time
1 : ¥12.31000
Cut Tape (CT)
2,500 : ¥5.08197
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
29A (Ta), 100A (Tc)
3V, 8V
3.4mOhm @ 30A, 8V
1.6V @ 250µA
18.3 nC @ 4.5 V
+10V, -8V
2600 pF @ 15 V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8PQFN
IRLH5034TRPBF
MOSFET N-CH 40V 29A/100A 8PQFN
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
29A (Ta), 100A (Tc)
4.5V, 10V
2.4mOhm @ 50A, 10V
2.5V @ 150µA
82 nC @ 10 V
±16V
4730 pF @ 25 V
-
3.6W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerVDFN
8-PowerVDFN
IRFH5302DTR2PBF
MOSFET N-CH 30V 29A 8VQFN
Infineon Technologies
0
In Stock
1 : ¥12.64000
Cut Tape (CT)
-
Cut Tape (CT)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
29A (Ta), 100A (Tc)
-
2.5mOhm @ 50A, 10V
2.35V @ 100µA
55 nC @ 10 V
-
3635 pF @ 25 V
-
-
-
Surface Mount
PQFN (5x6) Single Die
8-PowerVDFN
MOSFET N-CH 30V 29A/100A PQFN
IRFH5302DTRPBF
MOSFET N-CH 30V 29A/100A PQFN
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
29A (Ta), 100A (Tc)
4.5V, 10V
2.5mOhm @ 50A, 10V
2.35V @ 100µA
55 nC @ 10 V
±20V
3635 pF @ 25 V
-
3.6W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6) Single Die
8-PowerVDFN
8PQFN
IRLH5034TR2PBF
MOSFET N-CH 40V 100A 5X6 PQFN
Infineon Technologies
0
In Stock
1 : ¥17.49000
Cut Tape (CT)
-
Cut Tape (CT)
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
29A (Ta), 100A (Tc)
-
2.4mOhm @ 50A, 10V
2.5V @ 150µA
82 nC @ 10 V
-
4730 pF @ 25 V
-
-
-
Surface Mount
8-PQFN (5x6)
8-PowerVDFN
Showing
of 9

29A (Ta), 100A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.