Single FETs, MOSFETs

Results: 3
Manufacturer
onsemiRohm SemiconductorSTMicroelectronics
Series
-SuperMESH™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
60 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
260mA (Ta)7A (Tc)93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V18V
Rds On (Max) @ Id, Vgs
28.6mOhm @ 36A, 18V950mOhm @ 3.5A, 10V2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA4.5V @ 100µA5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs
0.81 nC @ 5 V53 nC @ 10 V133 nC @ 18 V
Vgs (Max)
±20V+22V, -4V±30V
Input Capacitance (Ciss) (Max) @ Vds
26.7 pF @ 25 V1110 pF @ 25 V2208 pF @ 500 V
Power Dissipation (Max)
300mW (Tj)125W (Tc)339W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAKSOT-23-3 (TO-236)TO-247N
Package / Case
TO-236-3, SC-59, SOT-23-3TO-247-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002ET1G
MOSFET N-CH 60V 260MA SOT23-3
onsemi
437,751
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.32434
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
260mA (Ta)
4.5V, 10V
2.5Ohm @ 240mA, 10V
2.5V @ 250µA
0.81 nC @ 5 V
±20V
26.7 pF @ 25 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-247N
SCT3022ALGC11
SICFET N-CH 650V 93A TO247N
Rohm Semiconductor
1,492
In Stock
1 : ¥418.54000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
93A (Tc)
18V
28.6mOhm @ 36A, 18V
5.6V @ 18.2mA
133 nC @ 18 V
+22V, -4V
2208 pF @ 500 V
-
339W (Tc)
175°C (TJ)
Through Hole
TO-247N
TO-247-3
D²PAK
STB9NK60ZT4
MOSFET N-CH 600V 7A D2PAK
STMicroelectronics
1,000
In Stock
1 : ¥25.12000
Cut Tape (CT)
1,000 : ¥12.99005
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
7A (Tc)
10V
950mOhm @ 3.5A, 10V
4.5V @ 100µA
53 nC @ 10 V
±30V
1110 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.