Single FETs, MOSFETs

Results: 10
Manufacturer
Alpha & Omega Semiconductor Inc.Nexperia USA Inc.Toshiba Semiconductor and StorageVishay Siliconix
Series
-TrenchFET®TrenchMOS™U-MOSVIU-MOSVIIU-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V40 V55 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)2A (Ta)3A (Ta)3.5A (Ta)4.2A (Ta)5.5A (Tc)6A (Ta)16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 8V2.5V, 10V4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
17.6mOhm @ 6A, 8V36mOhm @ 5A, 10V43mOhm @ 4.2A, 10V65mOhm @ 5.7A, 10V69mOhm @ 2A, 10V75mOhm @ 3A, 10V92mOhm @ 2A, 10V137mOhm @ 5A, 10V300mOhm @ 1A, 10V1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1V @ 1mA1.4V @ 250µA2V @ 1mA2.1V @ 250µA2.5V @ 100µA2.5V @ 250µA2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V3.2 nC @ 4.5 V5 nC @ 10 V5.3 nC @ 5 V6.6 nC @ 4.5 V8.3 nC @ 10 V9.3 nC @ 10 V15 nC @ 10 V19.5 nC @ 4.5 V38 nC @ 10 V
Vgs (Max)
+10V, -20V±10V±12V±15V±20V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V180 pF @ 20 V320 pF @ 25 V330 pF @ 10 V430 pF @ 15 V550 pF @ 10 V590 pF @ 30 V620 pF @ 10 V1385 pF @ 25 V1400 pF @ 6 V
Power Dissipation (Max)
270mW (Ta)615mW (Ta), 7.5W (Tc)652mW (Ta), 7.5W (Tc)1W (Ta)1.2W (Ta)1.4W (Ta)8W (Tc)53W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C150°C (TJ)175°C
Supplier Device Package
6-TSOPPowerPAK® 1212-8WS-MiniSOT-223SOT-23-3SOT-23FTO-236AB
Package / Case
3-SMD, SOT-23-3 VariantPowerPAK® 1212-8WSC-74, SOT-457SOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV60ENEAR
MOSFET N-CH 40V 3A TO236AB
Nexperia USA Inc.
36,995
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.80459
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
3A (Ta)
4.5V, 10V
75mOhm @ 3A, 10V
2.5V @ 250µA
5 nC @ 10 V
±20V
180 pF @ 20 V
-
615mW (Ta), 7.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
AO3423
MOSFET P-CH 20V 2A SOT23-3L
Alpha & Omega Semiconductor Inc.
86,263
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68275
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2A (Ta)
2.5V, 10V
92mOhm @ 2A, 10V
1.4V @ 250µA
6.6 nC @ 4.5 V
±12V
620 pF @ 10 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
244,134
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.73442
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
4V, 10V
300mOhm @ 1A, 10V
2V @ 1mA
8.3 nC @ 10 V
+10V, -20V
330 pF @ 10 V
-
1W (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
32,148
In Stock
1 : ¥5.58000
Cut Tape (CT)
3,000 : ¥1.29846
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
36mOhm @ 5A, 10V
2.5V @ 100µA
9.3 nC @ 10 V
±20V
550 pF @ 10 V
-
1.2W (Ta)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
362,255
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥0.87864
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
6A (Ta)
1.8V, 8V
17.6mOhm @ 6A, 8V
1V @ 1mA
19.5 nC @ 4.5 V
±10V
1400 pF @ 6 V
-
1W (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SOT223
BUK98150-55A/CUF
MOSFET N-CH 55V 5.5A SOT223
Nexperia USA Inc.
87,196
In Stock
1 : ¥3.94000
Cut Tape (CT)
4,000 : ¥1.33697
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
5.5A (Tc)
4.5V, 10V
137mOhm @ 5A, 10V
2V @ 1mA
5.3 nC @ 5 V
±15V
320 pF @ 25 V
-
8W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-223
TO-261-4, TO-261AA
PowerPAK-1212-8W_Top
SQ7415CENW-T1_GE3
AUTOMOTIVE P-CHANNEL 60-V (D-S)
Vishay Siliconix
10,151
In Stock
1 : ¥7.72000
Cut Tape (CT)
3,000 : ¥2.92209
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
16A (Tc)
4.5V, 10V
65mOhm @ 5.7A, 10V
2.5V @ 250µA
38 nC @ 10 V
±20V
1385 pF @ 25 V
-
53W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 1212-8W
PowerPAK® 1212-8W
AECQ MOSFET NCH 100V 3.5A SOT23F
SSM3K361R,LXHF
AECQ MOSFET NCH 100V 3.5A SOT23F
Toshiba Semiconductor and Storage
9,726
In Stock
1 : ¥8.05000
Cut Tape (CT)
3,000 : ¥1.98420
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Active
N-Channel
MOSFET (Metal Oxide)
100 V
3.5A (Ta)
4.5V, 10V
69mOhm @ 2A, 10V
2.5V @ 100µA
3.2 nC @ 4.5 V
±20V
430 pF @ 15 V
-
1.2W (Ta)
175°C
Automotive
AEC-Q101
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
Automotive, AEC-Q101 Series
PMN40ENAX
MOSFET N-CH 60V 4.2A 6TSOP
Nexperia USA Inc.
33,089
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.16300
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
4.2A (Ta)
4.5V, 10V
43mOhm @ 4.2A, 10V
2.7V @ 250µA
15 nC @ 10 V
±20V
590 pF @ 30 V
-
652mW (Ta), 7.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
6-TSOP
SC-74, SOT-457
17,234
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.41375
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
400mA (Ta)
4.5V, 10V
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
-
270mW (Ta)
150°C
Automotive
AEC-Q101
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.