Single FETs, MOSFETs

Results: 4
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon Technologiesonsemi
Series
AlphaSGT™OptiMOS™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)4.4A (Ta)12A (Ta)16A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
4.85mOhm @ 16A, 10V11mOhm @ 12A, 10V56mOhm @ 4.4A, 10V140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 3.7µA2.6V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 5 V21 nC @ 10 V35 nC @ 10 V62 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
143 pF @ 10 V1335 pF @ 75 V1725 pF @ 50 V4065 pF @ 50 V
Power Dissipation (Max)
500mW (Ta)2.5W (Ta), 50W (Tc)2.7W (Ta), 156W (Tc)3.1W (Ta)
Supplier Device Package
8-PQFN (5x6)8-SOICPG-SOT23
Package / Case
8-PowerTDFN8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS214NH6327XTSA1
MOSFET N-CH 20V 1.5A SOT23-3
Infineon Technologies
288,929
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥0.69154
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.5A (Ta)
2.5V, 4.5V
140mOhm @ 1.5A, 4.5V
1.2V @ 3.7µA
0.8 nC @ 5 V
±12V
143 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
8-PQFN
FDMS86150
MOSFET N CH 100V 16A POWER56
onsemi
8,386
In Stock
1 : ¥30.95000
Cut Tape (CT)
3,000 : ¥15.05648
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
16A (Ta), 60A (Tc)
6V, 10V
4.85mOhm @ 16A, 10V
4V @ 250µA
62 nC @ 10 V
±20V
4065 pF @ 50 V
-
2.7W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
9,731
In Stock
1 : ¥7.64000
Cut Tape (CT)
3,000 : ¥3.14652
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
12A (Ta)
4.5V, 10V
11mOhm @ 12A, 10V
2.6V @ 250µA
35 nC @ 10 V
±20V
1725 pF @ 50 V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
8-PQFN
FDMS86252L
MOSFET N-CH 150V 4.4A 8PQFN
onsemi
7,405
In Stock
36,000
Factory
1 : ¥16.67000
Cut Tape (CT)
3,000 : ¥7.51575
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
4.4A (Ta)
4.5V, 10V
56mOhm @ 4.4A, 10V
3V @ 250µA
21 nC @ 10 V
±20V
1335 pF @ 75 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.