Single FETs, MOSFETs

Results: 8
Manufacturer
Infineon TechnologiesNexperia USA Inc.Vishay Siliconix
Series
-HEXFET®OptiMOS™
Product Status
ActiveLast Time BuyObsolete
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)10A (Tc)32A (Tc)62A (Tc)78A (Tc)100A (Tc)120A (Tc)195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 100A, 10V1.75mOhm @ 195A, 10V2.1mOhm @ 15A, 10V3.5mOhm @ 40A, 10V8.7mOhm @ 31A, 10V17mOhm @ 10A, 10V100mOhm @ 1.5A, 5V200mOhm @ 6A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA2.15V @ 1mA2.35V @ 100µA2.35V @ 25µA4V @ 200µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.4 nC @ 5 V10.7 nC @ 10 V13 nC @ 4.5 V18 nC @ 5 V54 nC @ 4.5 V117 nC @ 10 V240 nC @ 10 V250 nC @ 10 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V552 pF @ 15 V870 pF @ 25 V1077 pF @ 15 V5110 pF @ 15 V6810 pF @ 12 V9200 pF @ 25 V20000 pF @ 20 V
Power Dissipation (Max)
1.3W (Ta)43W (Tc)45W (Tc)65W (Tc)140W (Tc)211W (Tc)250W (Tc)380W (Tc)
Supplier Device Package
4-HVMDIPPG-TO220-3-1TO-220AB
Package / Case
4-DIP (0.300", 7.62mm)TO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRLB4132PBF
MOSFET N-CH 30V 78A TO220AB
Infineon Technologies
10,357
In Stock
1 : ¥5.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
30 V
78A (Tc)
4.5V, 10V
3.5mOhm @ 40A, 10V
2.35V @ 100µA
54 nC @ 4.5 V
±20V
5110 pF @ 15 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRLB8721PBF
MOSFET N-CH 30V 62A TO220AB
Infineon Technologies
14,322
In Stock
1 : ¥8.62000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
30 V
62A (Tc)
4.5V, 10V
8.7mOhm @ 31A, 10V
2.35V @ 25µA
13 nC @ 4.5 V
±20V
1077 pF @ 15 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB
IRLZ14PBF
MOSFET N-CH 60V 10A TO220AB
Vishay Siliconix
2,742
In Stock
1 : ¥8.78000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
10A (Tc)
4V, 5V
200mOhm @ 6A, 5V
2V @ 250µA
8.4 nC @ 5 V
±10V
400 pF @ 25 V
-
43W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFB3004PBF
MOSFET N-CH 40V 195A TO220AB
Infineon Technologies
506
In Stock
1 : ¥37.02000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
10V
1.75mOhm @ 195A, 10V
4V @ 250µA
240 nC @ 10 V
±20V
9200 pF @ 25 V
-
380W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
IPP015N04NGXKSA1
MOSFET N-CH 40V 120A TO220-3
Infineon Technologies
361
In Stock
1 : ¥39.24000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
120A (Tc)
10V
1.5mOhm @ 100A, 10V
4V @ 200µA
250 nC @ 10 V
±20V
20000 pF @ 20 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
TO-220AB
PSMN017-30PL,127
MOSFET N-CH 30V 32A TO220AB
Nexperia USA Inc.
599
In Stock
1 : ¥13.30000
Tube
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
32A (Tc)
4.5V, 10V
17mOhm @ 10A, 10V
2.15V @ 1mA
10.7 nC @ 10 V
±20V
552 pF @ 15 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
4-DIP
IRLD024PBF
MOSFET N-CH 60V 2.5A 4DIP
Vishay Siliconix
6,064
In Stock
1 : ¥22.17000
Tube
-
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
60 V
2.5A (Ta)
4V, 5V
100mOhm @ 1.5A, 5V
2V @ 250µA
18 nC @ 5 V
±10V
870 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 175°C (TJ)
Through Hole
4-HVMDIP
4-DIP (0.300", 7.62mm)
TO-220AB
PSMN2R0-30PL,127
MOSFET N-CH 30V 100A TO220AB
Nexperia USA Inc.
9,190
In Stock
1 : ¥29.31000
Tube
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
100A (Tc)
4.5V, 10V
2.1mOhm @ 15A, 10V
2.15V @ 1mA
117 nC @ 10 V
±20V
6810 pF @ 12 V
-
211W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.