Single FETs, MOSFETs

Results: 19
Manufacturer
EPCInfineon TechnologiesNexperia USA Inc.onsemiRohm SemiconductorSTMicroelectronicsToshiba Semiconductor and StorageWolfspeed, Inc.
Series
-C3M™CoolMOS™eGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
200 V600 V650 V800 V1200 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)21A (Tc)29A (Tc)30A (Tc)33A (Tc)37A (Tc)40A (Tc)45A (Tc)46A (Tc)50A (Tc)60A (Tc)81A (Tj)95A (Tc)102A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V6V10V12V15V15V, 18V18V18V, 20V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 32A, 5V10mOhm @ 50A, 12V23mOhm @ 48A, 10V23.4mOhm @ 42A, 18V52mOhm @ 30A, 10V55mOhm @ 20A, 18V65mOhm @ 20A, 18V67mOhm @ 20A, 20V70mOhm @ 20A, 18V80mOhm @ 8A, 6V87mOhm @ 15A, 18V97mOhm @ 18.5A, 10V105mOhm @ 12A, 18V105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
2.5V @ 30.7mA2.5V @ 8mA3.6V @ 1.86mA4V @ 100µA4.2V @ 1mA4.2V @ 250µA4.3V @ 4mA4.3V @ 6.5mA4.5V @ 3.08mA4.75V @ 250µA4.8V @ 22.2mA5V @ 1.6mA5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 6 V10.7 nC @ 10 V24 nC @ 5 V26 nC @ 15 V37 nC @ 18 V39.5 nC @ 18 V41 nC @ 18 V50 nC @ 18 V52.6 nC @ 10 V63 nC @ 18 V73 nC @ 20 V74 nC @ 18 V94 nC @ 18 V170 nC @ 18 V
Vgs (Max)
+6V, -4V+7V, -6V+18V, -5V+19V, -8V±20V+21V, -4V+22V, -10V+22V, -8V+25V, -10V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 400 V540 pF @ 400 V640 pF @ 400 V900 pF @ 850 V920 pF @ 400 V956 pF @ 325 V1230 pF @ 800 V1362 pF @ 400 V1370 pF @ 400 V1473 pF @ 325 V1969 pF @ 800 V2211 pF @ 100 V3195 pF @ 100 V4532 pF @ 800 V
Power Dissipation (Max)
86W (Tc)110W (Tc)132W (Tc)170W (Tc)208W (Tc)221W (Tc)223W (Tc)240W (Tc)250W (Tc)290W (Tc)312W320W (Tc)390W (Tc)463W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-40°C ~ 175°C (TJ)175°C175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
7-QFN (3x5)D2PAK-7DFN8080-8H2PAK-7HiP247™HU3PAKPG-HDSOP-22-1TO-220TO-247TO-247 Long LeadsTO-247-4TO-247NTO-263-7
Package / Case
7-PowerWQFN8-VDFN Exposed Pad22-PowerBSOP ModuleTO-220-3TO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
19Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2304ENGRT
EPC2304ENGRT
TRANS GAN 200V .005OHM 3X5PQFN
EPC
20,657
In Stock
1 : ¥69.04000
Cut Tape (CT)
3,000 : ¥36.71107
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
102A (Ta)
5V
3.1mOhm @ 32A, 5V
2.5V @ 8mA
24 nC @ 5 V
+6V, -4V
3195 pF @ 100 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
GAN080-650EBEZ
GAN080-650EBEZ
650 V, 80 MOHM GALLIUM NITRIDE (
Nexperia USA Inc.
1,926
In Stock
1 : ¥70.19000
Cut Tape (CT)
2,500 : ¥26.88615
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
29A (Tc)
6V
80mOhm @ 8A, 6V
2.5V @ 30.7mA
6.2 nC @ 6 V
+7V, -6V
225 pF @ 400 V
-
240W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount, Wettable Flank
DFN8080-8
8-VDFN Exposed Pad
TO-247N
SCT4018KEC11
1200V, 81A, 3-PIN THD, TRENCH-ST
Rohm Semiconductor
363
In Stock
1 : ¥120.43000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
81A (Tj)
18V
23.4mOhm @ 42A, 18V
4.8V @ 22.2mA
170 nC @ 18 V
+21V, -4V
4532 pF @ 800 V
-
312W
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
C3M0065090J
C3M0120065J
650V 120M SIC MOSFET
Wolfspeed, Inc.
1,470
In Stock
1 : ¥63.79000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
26 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
86W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
HU3PAK
STHU32N65DM6AG
AUTOMOTIVE-GRADE N-CHANNEL 650 V
STMicroelectronics
563
In Stock
1 : ¥69.45000
Cut Tape (CT)
600 : ¥45.23905
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
37A (Tc)
10V
97mOhm @ 18.5A, 10V
4.75V @ 250µA
52.6 nC @ 10 V
±25V
2211 pF @ 100 V
-
320W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
HU3PAK
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
SCTH35N65G2V-7
SICFET N-CH 650V 45A H2PAK-7
STMicroelectronics
1,704
In Stock
1 : ¥124.54000
Cut Tape (CT)
1,000 : ¥78.84906
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
45A (Tc)
18V, 20V
67mOhm @ 20A, 20V
5V @ 1mA
73 nC @ 20 V
+22V, -10V
1370 pF @ 400 V
-
208W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3 HiP
SCTW40N120G2VAG
SICFET N-CH 1200V 33A HIP247
STMicroelectronics
578
In Stock
1 : ¥141.94000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
33A (Tc)
18V
105mOhm @ 20A, 18V
5V @ 1mA
63 nC @ 18 V
+22V, -10V
1230 pF @ 800 V
-
290W (Tc)
-55°C ~ 200°C (TJ)
Automotive
AEC-Q101
Through Hole
HiP247™
TO-247-3
D2PAK-7
NTBG060N065SC1
SILICON CARBIDE (SIC) MOSFET - 4
onsemi
730
In Stock
800
Factory
1 : ¥86.94000
Cut Tape (CT)
800 : ¥45.20464
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
46A (Tc)
15V, 18V
70mOhm @ 20A, 18V
4.3V @ 6.5mA
74 nC @ 18 V
+22V, -8V
1473 pF @ 325 V
-
170W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
D2PAK-7
NVBG095N065SC1
SIC MOS D2PAK-7L 650V
onsemi
785
In Stock
5,600
Factory
1 : ¥90.63000
Cut Tape (CT)
800 : ¥57.09889
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
30A (Tc)
15V, 18V
105mOhm @ 12A, 18V
4.3V @ 4mA
50 nC @ 18 V
-
956 pF @ 325 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
N-CHANNEL 650 V, 19.9 MOHM TYP.,
STWA65N023M9
N-CHANNEL 650 V, 19.9 MOHM TYP.,
STMicroelectronics
636
In Stock
This product has a maximum purchase limit
1 : ¥164.52000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
95A (Tc)
10V
23mOhm @ 48A, 10V
4.2V @ 250µA
230 nC @ 10 V
±30V
8844 pF @ 400 V
-
463W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 Long Leads
TO-247-3
TW015N65C,S1F
TW048N65C,S1F
G3 650V SIC-MOSFET TO-247 48MOH
Toshiba Semiconductor and Storage
32
In Stock
1 : ¥137.18000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
40A (Tc)
18V
65mOhm @ 20A, 18V
5V @ 1.6mA
41 nC @ 18 V
+25V, -10V
1362 pF @ 400 V
-
132W (Tc)
175°C
-
-
Through Hole
TO-247
TO-247-3
N-CHANNEL 650 V, 19.9 MOHM TYP.,
STW65N023M9-4
N-CHANNEL 650 V, 19.9 MOHM TYP.,
STMicroelectronics
59
In Stock
This product has a maximum purchase limit
1 : ¥114.60000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
95A (Tc)
10V
23mOhm @ 48A, 10V
4.2V @ 250µA
230 nC @ 10 V
±30V
8844 pF @ 400 V
-
463W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
IPDQ60R010S7XTMA1
IPDQ60R010S7XTMA1
HIGH POWER_NEW PG-HDSOP-22
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥163.78000
Cut Tape (CT)
750 : ¥117.10516
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
50A (Tc)
12V
10mOhm @ 50A, 12V
4.5V @ 3.08mA
318 nC @ 12 V
±20V
11987 pF @ 300 V
-
694W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
TO-263-7
SCT040H65G3AG
AUTOMOTIVE-GRADE SILICON CARBIDE
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥110.58000
Cut Tape (CT)
1,000 : ¥70.02679
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
30A (Tc)
15V, 18V
55mOhm @ 20A, 18V
4.2V @ 1mA
39.5 nC @ 18 V
+18V, -5V
920 pF @ 400 V
-
221W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
H2PAK-7
SCTH40N120G2V7AG
SICFET N-CH 650V 33A H2PAK-7
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥140.14000
Cut Tape (CT)
1,000 : ¥88.77403
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
33A (Tc)
18V
105mOhm @ 20A, 18V
5V @ 1mA
63 nC @ 18 V
+22V, -10V
1230 pF @ 800 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
N-CHANNEL 800 V, 515 MOHM TYP.,
STP80N600K6
N-CHANNEL 800 V, 515 MOHM TYP.,
STMicroelectronics
20
In Stock
1 : ¥19.46000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
7A (Tc)
10V
600mOhm @ 3A, 10V
4V @ 100µA
10.7 nC @ 10 V
±30V
540 pF @ 400 V
-
86W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
SCTH35N65G2V-7AG
SCTH35N65G2V-7AG
SICFET N-CH 650V 45A H2PAK-7
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥131.60000
Cut Tape (CT)
1,000 : ¥83.37045
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
45A (Tc)
18V, 20V
67mOhm @ 20A, 20V
5V @ 1mA
73 nC @ 20 V
+22V, -10V
1370 pF @ 400 V
-
208W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
0
In Stock
Check Lead Time
600 : ¥80.92157
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
30A (Tc)
15V, 18V
87mOhm @ 15A, 18V
4.2V @ 1mA
37 nC @ 18 V
+22V, -10V
900 pF @ 850 V
-
223W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
HU3PAK
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SICFET N-CH 1200V 60A H2PAK-7
SCTH60N120G2-7
SICFET N-CH 1200V 60A H2PAK-7
STMicroelectronics
0
In Stock
Check Lead Time
1,000 : ¥119.64787
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
18V
52mOhm @ 30A, 10V
5V @ 1mA
94 nC @ 18 V
+22V, -10V
1969 pF @ 800 V
-
390W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 19

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.