Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedonsemiPanjit International Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
50 V60 V150 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)320mA (Ta)2A (Ta)4.2A (Ta)8A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
17.5mOhm @ 20A, 10V68mOhm @ 6A, 10V85mOhm @ 3.2A, 10V1.6Ohm @ 500mA, 10V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.3V @ 250µA2.5V @ 250µA2.6V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V12.3 nC @ 10 V17 nC @ 10 V50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V50 pF @ 10 V606 pF @ 20 V879 pF @ 30 V3369 pF @ 75 V
Power Dissipation (Max)
200mW (Ta)300mW (Tj)800mW (Ta)1.5W (Ta), 107W (Tc)2.1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountSurface Mount, Wettable Flank
Supplier Device Package
DFN3333-8PowerDI5060-8 (Type UX)SOT-23-3SOT-23-3 (TO-236)SOT-323
Package / Case
8-PowerTDFN8-PowerVDFNSC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
745,947
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.40362
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-323
SC-70, SOT-323
SOT-23-3
DMN6075S-7
MOSFET N-CH 60V 2A SOT23
Diodes Incorporated
61,731
In Stock
411,000
Factory
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.54956
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
4.5V, 10V
85mOhm @ 3.2A, 10V
3V @ 250µA
12.3 nC @ 10 V
±20V
606 pF @ 20 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerDI5060 UX
DMTH15H017LPSWQ-13
MOSFET BVDSS: 101V~250V POWERDI5
Diodes Incorporated
3,313
In Stock
1 : ¥14.20000
Cut Tape (CT)
2,500 : ¥6.42040
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
8A (Ta), 50A (Tc)
4.5V, 10V
17.5mOhm @ 20A, 10V
2.6V @ 250µA
50 nC @ 10 V
±20V
3369 pF @ 75 V
-
1.5W (Ta), 107W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
SOT 23-3
2V7002KT1G
MOSFET N-CH 60V 320MA SOT23
onsemi
14,576
In Stock
1 : ¥2.55000
Cut Tape (CT)
3,000 : ¥0.43247
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
DFN3333-8
PJQ4463AP-AU_R2_000A1
60V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
17,744
In Stock
1 : ¥9.69000
Cut Tape (CT)
5,000 : ¥2.25694
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
4.2A (Ta)
4.5V, 10V
68mOhm @ 6A, 10V
2.5V @ 250µA
17 nC @ 10 V
±20V
879 pF @ 30 V
-
2.1W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN3333-8
8-PowerVDFN
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.