Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRFP7430PBF MOSFET N-CH 40V 195A TO247AC Infineon Technologies	375 In Stock	1 : ¥25.37000 Tube	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	195A (Tc)	6V, 10V	1.3mOhm @ 100A, 10V	3.9V @ 250µA	460 nC @ 10 V	±20V	14240 pF @ 25 V	-	366W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP4227PBF MOSFET N-CH 200V 65A TO247AC Infineon Technologies	3,457 In Stock	1 : ¥34.97000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	65A (Tc)	10V	25mOhm @ 46A, 10V	5V @ 250µA	98 nC @ 10 V	±30V	4600 pF @ 25 V	-	330W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP4568PBF MOSFET N-CH 150V 171A TO247AC Infineon Technologies	1,354 In Stock	1 : ¥62.56000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	171A (Tc)	10V	5.9mOhm @ 103A, 10V	5V @ 250µA	227 nC @ 10 V	±30V	10470 pF @ 50 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
SI2324A-TP MOSFET N-CH 100V 2A SOT23 Micro Commercial Co	175,416 In Stock	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.71245 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	2A (Tj)	4.5V, 10V	280mOhm @ 2A, 10V	2V @ 250µA	4.8 nC @ 4.5 V	±20V	520 pF @ 15 V	-	1.2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
TPH2R408QM,L1Q MOSFET N-CH 80V 120A 8SOP Toshiba Semiconductor and Storage	33,131 In Stock	1 : ¥12.97000 Cut Tape (CT) 5,000 : ¥5.61262 Tape & Reel (TR)	U-MOSX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	6V, 10V	2.43mOhm @ 50A, 10V	3.5V @ 1mA	87 nC @ 10 V	±20V	8300 pF @ 40 V	-	3W (Ta), 210W (Tc)	175°C	-	-	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
IRF1310NPBF MOSFET N-CH 100V 42A TO220AB Infineon Technologies	1,525 In Stock	1 : ¥14.37000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	42A (Tc)	10V	36mOhm @ 22A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	1900 pF @ 25 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
STL220N6F7 MOSFET N-CH 60V 120A POWERFLAT STMicroelectronics	4,928 In Stock	1 : ¥23.07000 Cut Tape (CT) 3,000 : ¥10.41066 Tape & Reel (TR)	STripFET™ F7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	120A (Tc)	10V	1.4mOhm @ 20A, 10V	4V @ 250µA	100 nC @ 10 V	±20V	6600 pF @ 25 V	-	4.8W (Ta), 187W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PowerFlat™ (5x6)	8-PowerVDFN
IRFP3006PBF MOSFET N-CH 60V 195A TO247AC Infineon Technologies	995 In Stock	1 : ¥35.14000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	195A (Tc)	10V	2.5mOhm @ 170A, 10V	4V @ 250µA	300 nC @ 10 V	±20V	8970 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP4368PBFXKMA1 TRENCH 40<-<100V Infineon Technologies	358 In Stock	1 : ¥64.69000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	195A (Tc)	10V	1.85mOhm @ 195A, 10V	4V @ 250µA	570 nC @ 10 V	±20V	19230 pF @ 50 V	-	520W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IXFK520N075T2 MOSFET N-CH 75V 520A TO264AA Littelfuse Inc.	0 In Stock Check Lead Time	1 : ¥128.57000 Tube	HiPerFET™, TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	520A (Tc)	10V	2.2mOhm @ 100A, 10V	5V @ 8mA	545 nC @ 10 V	±20V	41000 pF @ 25 V	-	1250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.