Single FETs, MOSFETs

Results: 14
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedInfineon TechnologiesVishay Siliconix
Series
-AlphaSGT™OptiMOS™OptiMOS™ 6
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V30 V40 V60 V100 V400 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)11A (Ta)12A (Ta), 12A (Tc)15A (Ta), 20A (Tc)17A (Ta), 30A (Tc)19A (Ta), 40A (Tc)21A (Ta), 34A (Tc)22A (Ta), 30A (Tc)24A (Ta), 40A (Tc)24A (Tc)32A (Ta), 85A (Tc)40A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 20A, 10V3.4mOhm @ 20A, 10V3.6mOhm @ 20A, 10V4.5mOhm @ 20A, 10V6.1mOhm @ 20A, 10V6.2mOhm @ 20A, 10V7.8mOhm @ 20A, 10V8.4mOhm @ 20A, 10V8.7mOhm @ 17A, 10V9.8mOhm @ 12A, 10V10mOhm @ 9.7A, 4.5V11mOhm @ 17A, 10V3.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
800mV @ 250µA2V @ 250µA2.1V @ 250µA2.2V @ 250µA2.25V @ 250µA2.3V @ 250µA2.5V @ 250µA2.6V @ 250µA3.6V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V15 nC @ 10 V20 nC @ 10 V25 nC @ 10 V30 nC @ 10 V32 nC @ 10 V45 nC @ 10 V50 nC @ 10 V50.6 nC @ 8 V70 nC @ 10 V95 nC @ 10 V105 nC @ 10 V
Vgs (Max)
±8V±16V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V540 pF @ 15 V700 pF @ 15 V1420 pF @ 15 V1480 pF @ 20 V1650 pF @ 30 V1800 pF @ 20 V1995 pF @ 15 V2425 pF @ 10 V2830 pF @ 15 V3505 pF @ 15 V5325 pF @ 50 V
Power Dissipation (Max)
690mW (Ta)2.1W (Ta), 52W (Tc)2.5W (Ta), 25W (Tc)2.5W (Ta), 75W (Tc)3.1W (Ta), 20.5W (Tc)3.1W (Ta), 24W (Tc)4.1W (Ta), 24W (Tc)5W (Ta), 27W (Tc)5W (Ta), 28W (Tc)5W (Ta), 30W (Tc)5W (Ta), 43W (Tc)7.3W (Ta), 83W (Tc)48W (Tc)215W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-DFN (3x3)8-DFN (5x6)8-DFN-EP (3x3)DPAKPG-TSDSON-8-FLU-DFN2020-6 (Type E)
Package / Case
6-PowerUDFN8-PowerSMD, Flat Leads8-PowerTDFN8-PowerVDFN8-SMD, Flat LeadsTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
U-DFN2020-6 Type E
DMN1019UFDE-7
MOSFET N CH 12V 11A U-DFN2020-6E
Diodes Incorporated
87,668
In Stock
1,158,000
Factory
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.26861
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
12 V
11A (Ta)
1.2V, 4.5V
10mOhm @ 9.7A, 4.5V
800mV @ 250µA
50.6 nC @ 8 V
±8V
2425 pF @ 10 V
-
690mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
220,348
In Stock
1 : ¥3.94000
Cut Tape (CT)
5,000 : ¥1.84721
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
24A (Tc)
4.5V, 10V
11mOhm @ 17A, 10V
2.3V @ 250µA
50 nC @ 10 V
±25V
1995 pF @ 15 V
-
5W (Ta), 28W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
8-DFN
AONR21357
MOSFET P-CH 30V 21A/34A 8DFN
Alpha & Omega Semiconductor Inc.
17,137
In Stock
1 : ¥5.50000
Cut Tape (CT)
5,000 : ¥1.99255
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 34A (Tc)
4.5V, 10V
7.8mOhm @ 20A, 10V
2.3V @ 250µA
70 nC @ 10 V
±25V
2830 pF @ 15 V
-
5W (Ta), 30W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
8-DFN
AON6407
MOSFET P-CH 30V 32A/85A 8DFN
Alpha & Omega Semiconductor Inc.
34,147
In Stock
1 : ¥7.72000
Cut Tape (CT)
3,000 : ¥3.20311
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta), 85A (Tc)
6V, 10V
4.5mOhm @ 20A, 10V
2.6V @ 250µA
105 nC @ 10 V
±25V
3505 pF @ 15 V
-
7.3W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
TSDSON-8
BSZ034N04LSATMA1
MOSFET N-CH 40V 19A/40A TSDSON
Infineon Technologies
33,195
In Stock
1 : ¥8.87000
Cut Tape (CT)
5,000 : ¥3.50549
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
19A (Ta), 40A (Tc)
4.5V, 10V
3.4mOhm @ 20A, 10V
2V @ 250µA
25 nC @ 10 V
±20V
1800 pF @ 20 V
-
2.1W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
4,697
In Stock
1 : ¥8.87000
Cut Tape (CT)
3,000 : ¥3.67849
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
40A (Tc)
4.5V, 10V
6.2mOhm @ 20A, 10V
2.2V @ 250µA
45 nC @ 10 V
±20V
1650 pF @ 30 V
-
48W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
8-DFN
AON7262E
MOSFET N-CH 60V 21A/34A 8DFN
Alpha & Omega Semiconductor Inc.
20,512
In Stock
1 : ¥7.80000
Cut Tape (CT)
5,000 : ¥3.06137
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
21A (Ta), 34A (Tc)
4.5V, 10V
6.2mOhm @ 20A, 10V
2.2V @ 250µA
45 nC @ 10 V
±20V
1650 pF @ 30 V
-
5W (Ta), 43W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
D-PAK (TO-252AA)
IRFR310TRPBF
MOSFET N-CH 400V 1.7A DPAK
Vishay Siliconix
11,423
In Stock
1 : ¥9.28000
Cut Tape (CT)
2,000 : ¥3.83583
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
400 V
1.7A (Tc)
10V
3.6Ohm @ 1A, 10V
4V @ 250µA
12 nC @ 10 V
±20V
170 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TSDSON-8
BSZ024N04LS6ATMA1
MOSFET N-CH 40V 24A/40A TSDSON
Infineon Technologies
88,830
In Stock
1 : ¥10.10000
Cut Tape (CT)
5,000 : ¥5.06750
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 40A (Tc)
4.5V, 10V
2.4mOhm @ 20A, 10V
2.3V @ 250µA
25 nC @ 10 V
±20V
1800 pF @ 20 V
-
2.5W (Ta), 75W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
2,955
In Stock
1 : ¥27.50000
Cut Tape (CT)
3,000 : ¥13.81836
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Tc)
6V, 10V
3.6mOhm @ 20A, 10V
3.6V @ 250µA
95 nC @ 10 V
±20V
5325 pF @ 50 V
-
215W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
0
In Stock
Check Lead Time
5,000 : ¥1.05391
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
30 V
15A (Ta), 20A (Tc)
4.5V, 10V
8.4mOhm @ 20A, 10V
2.1V @ 250µA
20 nC @ 10 V
±16V
700 pF @ 15 V
-
3.1W (Ta), 24W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
8-DFN
AONR32314
MOSFET N-CH 30V 17A/30A 8DFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Check Lead Time
5,000 : ¥1.06800
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
30 V
17A (Ta), 30A (Tc)
4.5V, 10V
8.7mOhm @ 17A, 10V
2.25V @ 250µA
32 nC @ 10 V
±20V
1420 pF @ 15 V
-
4.1W (Ta), 24W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (3x3)
8-SMD, Flat Leads
8-DFN
AONR36326C
MOSFET N-CH 30V 12A/12A 8DFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Check Lead Time
5,000 : ¥1.17248
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12A (Ta), 12A (Tc)
4.5V, 10V
9.8mOhm @ 12A, 10V
2.3V @ 250µA
15 nC @ 10 V
±20V
540 pF @ 15 V
-
3.1W (Ta), 20.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
8-DFN
AONR66406
MOSFET N-CH 40V 22A/30A 8DFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Check Lead Time
5,000 : ¥1.62521
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
40 V
22A (Ta), 30A (Tc)
4.5V, 10V
6.1mOhm @ 20A, 10V
2.5V @ 250µA
30 nC @ 10 V
±20V
1480 pF @ 20 V
-
5W (Ta), 27W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
Showing
of 14

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.