Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS127H6327XTSA2 MOSFET N-CH 600V 21MA SOT23-3 Infineon Technologies	58,189 In Stock	1 : ¥3.78000 Cut Tape (CT) 3,000 : ¥0.83562 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21mA (Ta)	4.5V, 10V	500Ohm @ 16mA, 10V	2.6V @ 8µA	1 nC @ 10 V	±20V	28 pF @ 25 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23	TO-236-3, SC-59, SOT-23-3
STD2NK100Z MOSFET N-CH 1000V 1.85A DPAK STMicroelectronics	4,712 In Stock	1 : ¥18.23000 Cut Tape (CT) 2,500 : ¥8.22816 Tape & Reel (TR)	SuperMESH™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	1.85A (Tc)	10V	8.5Ohm @ 900mA, 10V	4.5V @ 50µA	16 nC @ 10 V	±30V	499 pF @ 25 V	-	70W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
STF5NK100Z MOSFET N-CH 1000V 3.5A TO220FP STMicroelectronics	10,106 In Stock	1 : ¥34.89000 Tube	SuperMESH3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	3.5A (Tc)	10V	3.7Ohm @ 1.75A, 10V	4.5V @ 100µA	59 nC @ 10 V	±30V	1154 pF @ 25 V	-	30W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
APT9M100S MOSFET N-CH 1000V 9A D3PAK Microchip Technology	122 In Stock	1 : ¥48.77000 Tube	POWER MOS 8™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	9A (Tc)	10V	1.4Ohm @ 5A, 10V	5V @ 1mA	80 nC @ 10 V	±30V	2605 pF @ 25 V	-	335W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTP6N100D2 MOSFET N-CH 1000V 6A TO220AB Littelfuse Inc.	300 In Stock	1 : ¥75.45000 Tube	Depletion	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	6A (Tc)	-	2.2Ohm @ 3A, 0V	-	95 nC @ 5 V	±20V	2650 pF @ 25 V	Depletion Mode	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
RS6R035BHTB1 NCH 150V 35A, HSOP8, POWER MOSFE Rohm Semiconductor	2,454 In Stock	1 : ¥19.62000 Cut Tape (CT) 2,500 : ¥8.24061 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	35A (Tc)	6V, 10V	41mOhm @ 35A, 10V	4V @ 1mA	25 nC @ 10 V	±20V	1470 pF @ 75 V	-	3W (Ta), 73W (Tc)	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
STF8NK100Z MOSFET N-CH 1000V 6.5A TO220FP STMicroelectronics	22 In Stock	1 : ¥39.08000 Tube	SuperMESH™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	6.5A (Tc)	10V	1.85Ohm @ 3.15A, 10V	4.5V @ 100µA	102 nC @ 10 V	±30V	2180 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.