21mA (Ta) Single FETs, MOSFETs

Results: 13
Series
-SIPMOS®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New DesignsObsolete
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V4.5V, 10V
Vgs(th) (Max) @ Id
2.6V @ 8µA2.7V @ 8µA
Gate Charge (Qg) (Max) @ Vgs
0.65 nC @ 10 V1 nC @ 10 V1.4 nC @ 5 V2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
21 pF @ 25 V28 pF @ 25 V
FET Feature
-Depletion Mode
Supplier Device Package
PG-SOT-23-3PG-SOT23PG-SOT23-3-5
Stocking Options
Environmental Options
Media
Marketplace Product
13Results
Applied FiltersRemove All

Showing
of 13
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS127H6327XTSA2
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
58,189
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83562
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
4.5V, 10V
500Ohm @ 16mA, 10V
2.6V @ 8µA
1 nC @ 10 V
±20V
28 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS126IXTSA1
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
4,025
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.94082
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
-
500Ohm @ 16mA, 10V
2.7V @ 8µA
1.4 nC @ 5 V
±20V
21 pF @ 25 V
Depletion Mode
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3-5
TO-236-3, SC-59, SOT-23-3
BSS127IXTSA1
BSS127IXTSA1
SMALL SIGNAL MOSFETS PG-SOT23-3
Infineon Technologies
6,426
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.63057
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
4.5V, 10V
500Ohm @ 16mA, 10V
2.6V @ 8µA
0.65 nC @ 10 V
±20V
21 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS126H6327XTSA2
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
111,687
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.26954
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
0V, 10V
500Ohm @ 16mA, 10V
2.7V @ 8µA
2.1 nC @ 5 V
±20V
28 pF @ 25 V
Depletion Mode
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS126H6906XTSA1
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
6,818
In Stock
1 : ¥5.42000
Cut Tape (CT)
3,000 : ¥2.05125
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
0V, 10V
500Ohm @ 16mA, 10V
2.7V @ 8µA
2.1 nC @ 5 V
±20V
28 pF @ 25 V
Depletion Mode
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS127 E6327
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
0
In Stock
3,000 : ¥0.60649
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
4.5V, 10V
500Ohm @ 16mA, 10V
2.6V @ 8µA
1 nC @ 10 V
±20V
28 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS127L6327HTSA1
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
0
In Stock
3,000 : ¥0.67389
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
4.5V, 10V
500Ohm @ 16mA, 10V
2.6V @ 8µA
1 nC @ 10 V
±20V
28 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS126L6327HTSA1
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
0
In Stock
3,000 : ¥1.20714
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
0V, 10V
500Ohm @ 16mA, 10V
2.7V @ 8µA
2.1 nC @ 5 V
±20V
28 pF @ 25 V
Depletion Mode
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS126 E6327
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
0
In Stock
3,000 : ¥1.31847
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
0V, 10V
500Ohm @ 16mA, 10V
2.7V @ 8µA
2.1 nC @ 5 V
±20V
28 pF @ 25 V
Depletion Mode
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS126L6906HTSA1
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
0
In Stock
3,000 : ¥1.87638
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
0V, 10V
500Ohm @ 16mA, 10V
2.7V @ 8µA
2.1 nC @ 5 V
±20V
28 pF @ 25 V
Depletion Mode
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS126 E6906
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
0V, 10V
500Ohm @ 16mA, 10V
2.7V @ 8µA
2.1 nC @ 5 V
±20V
28 pF @ 25 V
Depletion Mode
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS126H6327XTSA1
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
0V, 10V
500Ohm @ 16mA, 10V
2.7V @ 8µA
2.1 nC @ 5 V
±20V
28 pF @ 25 V
Depletion Mode
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS127H6327XTSA1
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
4.5V, 10V
500Ohm @ 16mA, 10V
2.6V @ 8µA
1 nC @ 10 V
±20V
28 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
Showing
of 13

21mA (Ta) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.