15.8A (Ta) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

TK16G60W5,RVQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	998 In Stock	1 : ¥33.58000 Cut Tape (CT) 1,000 : ¥11.89706 Tape & Reel (TR)	DTMOSIV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	230mOhm @ 7.9A, 10V	4.5V @ 790µA	43 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TK16V60W5,LVQ PB-F POWER MOSFET TRANSISTOR DTM Toshiba Semiconductor and Storage	2,260 In Stock	1 : ¥35.63000 Cut Tape (CT) 2,500 : ¥12.82736 Tape & Reel (TR)	DTMOSIV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	245mOhm @ 7.9A, 10V	4.5V @ 790µA	43 nC @ 10 V	±30V	1350 pF @ 300 V	-	139W (Tc)	150°C	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad
TK16G60W,RVQ MOSFET N CH 600V 15.8A D2PAK Toshiba Semiconductor and Storage	994 In Stock	1 : ¥54.10000 Cut Tape (CT) 1,000 : ¥22.47353 Tape & Reel (TR)	DTMOSIV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TK16A60W,S4VX MOSFET N-CH 600V 15.8A TO220SIS Toshiba Semiconductor and Storage	50 In Stock	1 : ¥29.31000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38 nC @ 10 V	±30V	1350 pF @ 300 V	-	40W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK16A60W5,S4VX MOSFET N-CH 600V 15.8A TO220SIS Toshiba Semiconductor and Storage	49 In Stock	1 : ¥29.31000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 1.5mA	43 nC @ 10 V	±30V	1350 pF @ 300 V	-	40W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK16N60W,S1VF MOSFET N CH 600V 15.8A TO247 Toshiba Semiconductor and Storage	28 In Stock	1 : ¥29.64000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C (TJ)	Through Hole	TO-247	TO-247-3
TK16J60W,S1VE X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	42 In Stock	1 : ¥47.04000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
TK16E60W,S1VX MOSFET N-CH 600V 15.8A TO220 Toshiba Semiconductor and Storage	71 In Stock	1 : ¥28.49000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK16E60W5,S1VX MOSFET N-CH 600V 15.8A TO220 Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	50 : ¥16.79500 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	230mOhm @ 7.9A, 10V	4.5V @ 790µA	43 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK16J60W5,S1VQ X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	17 In Stock	1 : ¥48.11000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	230mOhm @ 7.9A, 10V	4.5V @ 790µA	43 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
TK16A60W,S4X MOSFET N-CH 600V 15.8A TO220 Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	2,500 : ¥17.44521 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	40 nC @ 10 V	±30V	1350 pF @ 300 V	-	40W (Tc)	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK16V60W,LVQ MOSFET N-CH 600V 15.8A 4DFN Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	1 : ¥34.15000 Cut Tape (CT) 2,500 : ¥11.62670 Tape & Reel (TR)	DTMOSIV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38 nC @ 10 V	±30V	1350 pF @ 300 V	-	139W (Tc)	150°C (TJ)	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad
TK16J60W,S1VQ MOSFET N-CH 600V 15.8A TO3P Toshiba Semiconductor and Storage	0 In Stock	Active	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C (TJ)	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3

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15.8A (Ta) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.