FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

AO6604 MOSFET N/P-CH 20V 3.4A 6TSOP Alpha & Omega Semiconductor Inc.	148,638 In Stock	1 : ¥4.10000 Cut Tape (CT) 3,000 : ¥1.39422 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel Complementary	Logic Level Gate, 4.5V Drive	20V	3.4A, 2.5A	65mOhm @ 3.4A, 4.5V	1V @ 250µA	3.8nC @ 4.5V	320pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-74, SOT-457	6-TSOP
DMHC4035LSD-13 MOSFET 2N/2P-CH 40V 4.5A 8SO Diodes Incorporated	38,923 In Stock 372,500 Factory	1 : ¥6.98000 Cut Tape (CT) 2,500 : ¥2.88275 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N and 2 P-Channel (Full Bridge)	-	40V	4.5A (Ta), 3.7A (Ta)	45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V	3V @ 250µA	12.5nC @ 10V, 11.1nC @ 10V	574pF @ 20V, 587pF @ 20V	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMG6602SVT-7 MOSFET N/P-CH 30V 3.4A TSOT26 Diodes Incorporated	128,443 In Stock 3,519,000 Factory	1 : ¥2.22000 Cut Tape (CT) 3,000 : ¥0.48619 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate, 4.5V Drive	30V	3.4A, 2.8A	60mOhm @ 3.1A, 10V	2.3V @ 250µA	13nC @ 10V	400pF @ 15V	840mW	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMC2700UDM-7 MOSFET N/P-CH 20V SOT26 Diodes Incorporated	1,187,037 In Stock 4,932,000 Factory	1 : ¥2.30000 Cut Tape (CT) 3,000 : ¥0.42068 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	20V	1.34A, 1.14A	400mOhm @ 600mA, 4.5V	1V @ 250µA	0.74nC @ 4.5V	60.67pF @ 16V	1.12W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6	SOT-26
DMC2450UV-7 MOSFET N/P-CH 20V SOT563 Diodes Incorporated	8,321 In Stock 948,000 Factory	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.58115 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	-	20V	1.03A, 700mA	480mOhm @ 200mA, 5V	900mV @ 250µA	0.5nC @ 4.5V	37.1pF @ 10V	450mW	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-563, SOT-666	SOT-563
QS6M4TR MOSFET N/P-CH 30V/20V 1.5A TSMT6 Rohm Semiconductor	9,519 In Stock	1 : ¥4.76000 Cut Tape (CT) 3,000 : ¥1.79597 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	30V, 20V	1.5A	230mOhm @ 1.5A, 4.5V	1.5V @ 1mA	1.6nC @ 4.5V	80pF @ 10V	1.25W	150°C (TJ)	-	-	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSMT6 (SC-95)

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.