FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

CAS300M17BM2 MOSFET 2N-CH 1700V 325A MODULE Wolfspeed, Inc.	36 In Stock	1 : ¥8,530.48000 Box	Z-Rec®	Box	Not For New Designs	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1700V (1.7kV)	325A (Tc)	10mOhm @ 225A, 20V	2.3V @ 15mA (Typ)	1076nC @ 20V	20000pF @ 1000V	1760W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
CAS300M12BM2 SIC 2N-CH 1200V 423A MODULE Wolfspeed, Inc.	0 In Stock	1 : ¥7,319.12000 Bulk	Z-FET™	Bulk	Not For New Designs	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	423A (Tc)	5.7mOhm @ 300A, 20V	2.3V @ 15mA (Typ)	1025nC @ 20V	19500pF @ 800V	1660W	150°C (TJ)	Chassis Mount	Module, Screw Terminals	Module

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.