FET, MOSFET Arrays

Showing

of 2

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

SQ3585EV-T1_GE3 MOSFET N/P-CH 20V 3.57A 6TSOP Vishay Siliconix	8,885 In Stock	1 : ¥39.41000 Cut Tape (CT) 3,000 : ¥13.82189 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	-	20V	3.57A (Tc), 2.5A (Tc)	77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V	1.5V @ 250µA	2.5nC @ 4.5V, 3.5nC @ 4.5V	-	1.67W	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SQ4532AEY-T1_GE3 MOSFET N/P-CH 30V 7.3A 8SOIC Vishay Siliconix	2,555 In Stock	1 : ¥11.74000 Cut Tape (CT) 2,500 : ¥3.23816 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	-	30V	7.3A (Tc), 5.3A (Tc)	31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V	2.5V @ 250µA	7.8nC @ 10V, 10.2nC @ 10V	535pF @ 15V, 528pF @ 15V	3.3W	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

Showing

of 2

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.