Single Bipolar Transistors

Results: 4
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
500 mA1 A4 A17 A
Voltage - Collector Emitter Breakdown (Max)
250 V300 V350 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A500mV @ 2mA, 20mA1V @ 200mA, 1A3V @ 800mA, 8A
Current - Collector Cutoff (Max)
100nA (ICBO)500nA (ICBO)10µA (ICBO)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 2A, 5V30 @ 300mA, 10V35 @ 7A, 5V40 @ 30mA, 10V
Power - Max
1.5 W2 W130 W
Frequency - Transition
10MHz30MHz50MHz
Operating Temperature
-65°C ~ 150°C (TJ)150°C (TJ)-
Mounting Type
Surface MountThrough Hole
Package / Case
TO-220-3TO-261-4, TO-261AATO-3P-3, SC-65-3
Supplier Device Package
SOT-223 (TO-261)TO-220TO-3PN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-223 (TO-261)
SPZTA42T1G
TRANS NPN 300V 0.5A SOT223
onsemi
69,108
In Stock
22,000
Factory
1 : ¥4.02000
Cut Tape (CT)
1,000 : ¥1.17700
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
500 mA
300 V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
1.5 W
50MHz
-
Surface Mount
TO-261-4, TO-261AA
SOT-223 (TO-261)
TO-220-3
TIP47G
TRANS NPN 250V 1A TO220
onsemi
1,910
In Stock
1 : ¥7.80000
Tube
-
Tube
Active
NPN
1 A
250 V
1V @ 200mA, 1A
1mA
30 @ 300mA, 10V
2 W
10MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
MJE15035G
TRANS PNP 350V 4A TO220
onsemi
1,456
In Stock
1 : ¥12.56000
Tube
-
Tube
Active
PNP
4 A
350 V
500mV @ 100mA, 1A
10µA (ICBO)
10 @ 2A, 5V
2 W
30MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-3P-3, SC-65-3
FJA4313OTU
TRANS NPN 250V 17A TO3PN
onsemi
0
In Stock
Check Lead Time
1 : ¥43.67000
Tube
-
Tube
Active
NPN
17 A
250 V
3V @ 800mA, 8A
500nA (ICBO)
35 @ 7A, 5V
130 W
30MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.