Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

IHW30N65R5XKSA1 IGBT TRENCH 650V 60A TO247-3 Infineon Technologies	391 In Stock	1 : ¥32.18000 Tube	TrenchStop™	Tube	Active	Trench	650 V	60 A	90 A	1.7V @ 15V, 30A	176 W	850µJ (on), 240µJ (off)	Standard	153 nC	29ns/220ns	400V, 30A, 13Ohm, 15V	95 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
RJH65T46DPQ-A0#T0 IGBT TRENCH 650V 80A TO247A Renesas Electronics Corporation	385 In Stock	1 : ¥44.99000 Tube	-	Tube	Active	Trench	650 V	80 A	-	2.4V @ 15V, 40A	340.9 W	450µJ (on), 550µJ (off)	Standard	138 nC	45ns/170ns	400V, 40A, 10Ohm, 15V	100 ns	175°C (TJ)	Through Hole	TO-247-3	TO-247A
IGW50N65H5FKSA1 IGBT 650V 80A TO247-3 Infineon Technologies	0 In Stock Check Lead Time	240 : ¥17.98942 Tube	TrenchStop®	Tube	Active	-	650 V	80 A	150 A	2.1V @ 15V, 50A	305 W	520µJ (on), 180µJ (off)	Standard	120 nC	21ns/180ns	400V, 25A, 12Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3

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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.