Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

STGWA30H65DFB2 DISCRETE STMicroelectronics	420 In Stock	1 : ¥23.97000 Bulk	-	Bulk	Active	Trench Field Stop	650 V	50 A	90 A	2.1V @ 15V, 30A	167 W	270µJ (on), 310µJ (off)	Standard	90 nC	18.4ns/71ns	400V, 30A, 6.8Ohm, 15V	115 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247 Long Leads
STGWA50H65DFB2 DISCRETE STMicroelectronics	240 In Stock	1 : ¥29.80000 Bulk	-	Bulk	Active	Trench Field Stop	650 V	86 A	150 A	2V @ 15V, 50A	272 W	910µJ (on), 580µJ (off)	Standard	151 nC	28ns/115ns	400V, 50A, 4.7Ohm, 15V	92 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247 Long Leads
NGTB35N65FL2WG IGBT TRENCH FS 650V 70A TO247-3 onsemi	0 In Stock Check Lead Time	1 : ¥46.80000 Tube	-	Tube	Active	Trench Field Stop	650 V	70 A	120 A	2V @ 15V, 35A	300 W	840µJ (on), 280µJ (off)	Standard	125 nC	72ns/132ns	400V, 35A, 10Ohm, 15V	68 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
STGWA20HP65FB2 TRENCH GATE FIELD-STOP 650 V, 20 STMicroelectronics	0 In Stock Check Lead Time	30 : ¥16.63867 Tube	HB2	Tube	Active	Trench Field Stop	650 V	40 A	60 A	2.1V @ 15V, 20A	147 W	214µJ (off)	Standard	56 nC	-/78.8ns	400V, 20A, 10Ohm, 15V	140 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247 Long Leads
STGWA100H65DFB2 TRENCH GATE FIELD-STOP, 650 V, 1 STMicroelectronics	0 In Stock Check Lead Time	30 : ¥42.32967 Tube	HB2	Tube	Active	Trench Field Stop	650 V	145 A	300 A	2V @ 15V, 100A	441 W	2.2mJ (on), 1.4mJ (off)	Standard	288 nC	30ns/130ns	400V, 100A, 2.2Ohm, 15V	123 ns	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247 Long Leads

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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.