Single FETs, MOSFETs

Results: 5
Manufacturer
EPCInfineon TechnologiesToshiba Semiconductor and Storage
Series
-eGaN®OptiMOS™ 2U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveDiscontinued at Digi-Key
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V100 V120 V150 V170 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 99A (Tc)24A (Ta)29A (Ta)60A (Tc)80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V5V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 30A, 4.5V2.2mOhm @ 30A, 5V6mOhm @ 16A, 5V8mOhm @ 50A, 10V9mOhm @ 10A, 5V
Vgs(th) (Max) @ Id
1.2V @ 1mA2.4V @ 112µA2.5V @ 11mA2.5V @ 3mA2.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
7.4 nC @ 5 V21 nC @ 5 V79 nC @ 10 V182 nC @ 5 V
Vgs (Max)
+6V, -4V6V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
836 pF @ 85 V851 pF @ 50 V2900 pF @ 75 V7400 pF @ 60 V10900 pF @ 10 V
Power Dissipation (Max)
78W (Tc)156W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
7-QFN (3x5)8-SOP Advance (5x5)DiePG-TDSON-8-7
Package / Case
7-PowerWQFN8-PowerTDFN8-PowerVDFNDie
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
13,058
In Stock
1 : ¥16.26000
Cut Tape (CT)
5,000 : ¥4.40251
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
60A (Tc)
2.5V, 4.5V
1.7mOhm @ 30A, 4.5V
1.2V @ 1mA
182 nC @ 5 V
±12V
10900 pF @ 10 V
-
78W (Tc)
150°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
EPC2059
EPC2059
TRANS GAN 170V DIE .009OHM
EPC
27,284
In Stock
1 : ¥27.26000
Cut Tape (CT)
2,500 : ¥13.26373
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
170 V
24A (Ta)
5V
9mOhm @ 10A, 5V
2.5V @ 3mA
7.4 nC @ 5 V
+6V, -4V
836 pF @ 85 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
8-Power TDFN
BSC0302LSATMA1
MOSFET N-CH 120V 12A/99A TDSON
Infineon Technologies
9,943
In Stock
1 : ¥17.40000
Cut Tape (CT)
5,000 : ¥7.55479
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
12A (Ta), 99A (Tc)
4.5V, 10V
8mOhm @ 50A, 10V
2.4V @ 112µA
79 nC @ 10 V
±20V
7400 pF @ 60 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
EPC2204
EPC2204
TRANS GAN 100V DIE 5.6MOHM
EPC
0
In Stock
Check Lead Time
1 : ¥19.79000
Cut Tape (CT)
2,500 : ¥8.93286
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
29A (Ta)
5V
6mOhm @ 16A, 5V
2.5V @ 4mA
7.4 nC @ 5 V
+6V, -4V
851 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2305ENGRT
EPC2305ENGRT
TRANS GAN 150V .003OHM 3X5MM QFN
EPC
0
In Stock
1 : ¥65.10000
Cut Tape (CT)
3,000 : ¥34.61456
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Discontinued at Digi-Key
N-Channel
GaNFET (Gallium Nitride)
150 V
80A (Ta)
5V
2.2mOhm @ 30A, 5V
2.5V @ 11mA
21 nC @ 5 V
6V
2900 pF @ 75 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
7-QFN (3x5)
7-PowerWQFN
Showing
of 5

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.