Single FETs, MOSFETs

Results: 5
Series
CoolMOS™OptiMOS™ 5OptiMOS™5StrongIRFET™ 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
100 V650 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)27A (Ta), 248A (Tc)31A (Tc)33A (Ta), 205A (Tc)162A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
1.83mOhm @ 100A, 10V2.6mOhm @ 100A, 10V2.65mOhm @ 100A, 10V99mOhm @ 18A, 10V125mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.1mA3.5V @ 1.2mA3.8V @ 148µA3.8V @ 169µA3.8V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V80 nC @ 10 V125 nC @ 10 V154 nC @ 10 V210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 100 V2800 pF @ 100 V6300 pF @ 50 V7300 pF @ 50 V16000 pF @ 50 V
Power Dissipation (Max)
3.8W (Ta), 313W (Tc)3.8W (Ta), 375W (Tc)208W (Tc)250W (Tc)255W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-HSOF-5-4PG-TO220-3PG-TO263-3
Package / Case
5-PowerSFNTO-220-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
1,224
In Stock
1 : ¥30.38000
Cut Tape (CT)
800 : ¥18.35364
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
162A (Tc)
6V, 10V
2.65mOhm @ 100A, 10V
3.8V @ 169µA
154 nC @ 10 V
±20V
7300 pF @ 50 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220-3
IPP60R125CPXKSA1
MOSFET N-CH 650V 25A TO220-3
Infineon Technologies
4,459
In Stock
1 : ¥35.06000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
25A (Tc)
10V
125mOhm @ 16A, 10V
3.5V @ 1.1mA
70 nC @ 10 V
±20V
2500 pF @ 100 V
-
208W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IPP60R099CPXKSA1
MOSFET N-CH 650V 31A TO220-3
Infineon Technologies
1,003
In Stock
1 : ¥66.99000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
31A (Tc)
10V
99mOhm @ 18A, 10V
3.5V @ 1.2mA
80 nC @ 10 V
±20V
2800 pF @ 100 V
-
255W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
1,663
In Stock
1 : ¥33.25000
Cut Tape (CT)
2,000 : ¥15.53603
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
27A (Ta), 248A (Tc)
6V, 10V
2.6mOhm @ 100A, 10V
3.8V @ 148µA
125 nC @ 10 V
±20V
6300 pF @ 50 V
-
3.8W (Ta), 313W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-5-4
5-PowerSFN
474
In Stock
1 : ¥52.62000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Ta), 205A (Tc)
6V, 10V
1.83mOhm @ 100A, 10V
3.8V @ 270µA
210 nC @ 10 V
±20V
16000 pF @ 50 V
-
3.8W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.